Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

Lopes, Élder Mantovani; Duarte, José Leonil; Dias, Ivan Frederico Lupiano; Laureto, Édson; Guimarães, P. S. S.; Subtil, A.G.S.; Quivy, A. A.

doi:10.1016/j.jlumin.2011.12.065

Cited by 5 publications

(2 citation statements)

References 33 publications

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“…The split of the PL bands is due to the existence of bimodal heterointerface roughness in the CDQWs. The details of the results obtained for this sample are discussed in two specific works previously published [18,19].…”

Section: Excitons In Magnetic Fieldsmentioning

confidence: 99%

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Lopes

Cesar

Franchello

et al. 2013

Journal of Luminescence

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Section: Excitons In Magnetic Fieldsmentioning

confidence: 99%

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Lopes

Cesar

Franchello

et al. 2013

Journal of Luminescence

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“…CDQW structures based on III-V semiconductor alloys have been characterized by a number of techniques, for example electroreflectance, absorbance, transmittance, photoluminescence, magnetophotoluminescence, photoreflectance, etc. (González-Fernández et al, 2016;Gozu & Mozume, 2015;Huang, Qiang, Pollak, Lee, & Elman, 1991;Lopes et al, 2012;Neogi, Yoshida, Mozume, Georgiev, & Wada, 2001). Photoreflectance (PR) spectroscopy has become an important characterization tool to study semiconductor nanostructures and offers important advantages over other techniques, such as contactless, room temperature sensibility and detection not only the lowest but also higher energy transitions even at room temperature (Pollak & Shen, 1993).…”

Section: Introductionmentioning

confidence: 99%

Quantum Wells Based Structures Tested by Photoreflectance Anisotropy Spectroscopy at Room Temperature

González-Fernández¹,

México²,

León-Zapata³

et al. 2018

Rev.Mex.Ing.Quim.

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Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence

Chen

Zhou

et al. 2020

Applied Physics Letters

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Interface roughness of the InAs/GaSb type-II superlattice (T2SL) is a key issue for infrared photodetector performance. While numerous studies have been performed on interface roughness from the atomic perspective, the relation with photoelectric performance is not yet straightforward. In this study, we carry out mid-infrared magnetophotoluminescence (MPL) measurements on InAs/GaSb T2SLs with a nominally identical period structure. Micro-fluctuation potential and effective interface roughness are evaluated and compared by the photoluminescence linewidth evolution. The analyses agree qualitatively with the x-ray diffraction linewidth and resolve two types of interface roughness quantitatively: the long lateral-length fluctuation, which is exacerbated by the lattice-mismatch, and the short lateral-length fluctuation, which is related possibly to interfacial atomic exchange. These results suggest that MPL can be an effective tool for evaluating the micro-fluctuation potential of InAs/GaSb T2SLs and understanding the effects of interface roughness on electro-optical performance.

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Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

Cited by 5 publications

References 33 publications

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Quantum Wells Based Structures Tested by Photoreflectance Anisotropy Spectroscopy at Room Temperature

Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence

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