Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Lopes, Élder Mantovani; Cesar, D. F.; Franchello, Flavio; Duarte, José Leonil; Dias, Ivan Frederico Lupiano; Laureto, Édson; Elias, D. C.; Pereira, M. V. M.; Guimarães, P. S. S.; Quivy, A. A.

doi:10.1016/j.jlumin.2013.06.037

Cited by 9 publications

(1 citation statement)

References 20 publications

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“…[2][3][4][5][6][7] The exciton binding energy in Cylindrical quantum dot, Triangular quantum well, Rectangular quantum well and Coupled double quantum well have been investigated theoretically and experimentally by several authors. [8][9][10][11][12][13] The response of exciton to the electric field in such confined systems has to be considered for the fabrication of spintronic and opto-electronic devices. 14,15 Monier et al determined the oscillator strength of excitons as a function of well width in In x Ga 1-x As/GaAs quantum wells under large electric field.…”

Section: Introductionmentioning

confidence: 99%

Polarizability of Exciton in Surface Quantum Well

Anitha¹,

Arulmozhi²

2019

JPS

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Surface quantum wells are seeking considerable attention due to their asymmetrical nature of polarized interface and its consequences. Their results with and without external perturbations are expected to be remarkably different from their counterparts in symmetrical quantum wells. Effect of electric field on binding energies of light hole and heavy hole exciton in surface quantum well composed of vacuum/GaAs/Ga 1-x Al x As are theoretically calculated as a function of well width and Al composition. Effect of image charges arising due to the mismatch of the dielectric constant at the vacuum/GaAs interface is considered. Stark shift and polarizability of exciton in this surface quantum well is also calculated for various strengths of electric field with different well width confinement as well as Al concentration. Our results show that: (1) exciton binding energy increases as the electric field applied along the growth axis increases; (2) stark shift in exciton energy decreases as electric field, Al composition and well width increase; and (3) polarizability of exciton decreases when the electric field increases, but increases when well width increases. Variation of our results with those for other symmetrical wells will provide a choice of the well for electric field applications.

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Section: Introductionmentioning

confidence: 99%

Polarizability of Exciton in Surface Quantum Well

Anitha¹,

Arulmozhi²

2019

JPS

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Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well

Rojas-Briseño

Miranda-Pedraza

Martı́nez-Orozco

2016

Phys. Status Solidi B

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In this work, the study of the 1s‐like exciton states and binding energy is presented for coupled double zinc blende GaN/InGaN quantum wells. The effective mass approximation and a variational procedure are the key theoretical tools used. The significant role of the position‐dependent effective mass is highlighted. It is found that the correct inclusion of position‐dependent masses is the cause of a noticeable difference in exciton energies with respect to the use of constant effective mass. In addition, the influence of the interaction of electrons and holes with the central barrier, and the effect of its size are particularly discussed.

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Excitonic susceptibility in near triangular quantum wells

Anitha¹,

Arulmozhi²

2016

Indian J Phys

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Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Cited by 9 publications

References 20 publications

Polarizability of Exciton in Surface Quantum Well

Polarizability of Exciton in Surface Quantum Well

Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well

Excitonic susceptibility in near triangular quantum wells

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