Magnetoelectric Sensor of Magnetic Field

Abstract

As an alternative to semiconductor sensor and sensor on hermetic contacts we present sensor based on magnetoelectric effect. In researches there are used the magnetoelectric bulk composites containing 95% of yttrium-iron garnet and 5% of lead zirconate titanate (PZT) and multilayer composite material consisting of PZT and Ni 0.5 Zn 0.5 Fe 2 O 4 . The magnetoelectric sensor represents the disk or plate from the magnetoelectric material with two electrodes for connecting to the voltage meter. The action of the sensor is based on magnetoelectric interaction. The experimental model was made for determining the basic parameters of the magnetoelectric sensor and optimization of its design.

Magnetoelectric Effect in Ceramics Based on Bismuth Ferrite

“…The higher value of this parameter can be achieved in magnetoelectric material at room temperature, and the wider range of its potential applications can be expected. The most frequently mentioned prototypes of magnetoelectric devices which were developed so far are magnetic field sensors [9–11] and energy harvesting devices [12–14]. Among the new proposals for the use of magnetoelectric coupling phenomenon, the most spectacular and forward-looking ideas seem to be new-generation memories [15–17], spintronic devices (e.g., spin valves, magnetic tunnel junctions) [18–20], microwave, millimeter-wave devices and miniature antennas [14], and wireless medical tools (e.g., for endoscopy and brain imaging) [14].…”

Exceptional magnetic sensitivity of PT -symmetric cavity magnon polaritons

“…On the other hand, highly sensitive magnetometers are indispensable tools which assisted humankind through a wide range of practical applications in geology, navigation, archaeology, magnetic storage, and medicine [23][24][25]. The technologies used for magnetic field sensing encompass many aspects of physics, such as search coil, fluxgate, Hall effect, magnetoelectric coupling, spin mechanics, and magnetoresistance [26][27][28][29][30], to name a few. The state-of-the-art magnetic sensor can reach an ultrahigh sensitivity of subfetotesla, like a superconducting quantum interference device [31,32] and atomic magnetometer [33,34], however with limitations such as extreme temperature [31,32] or low working frequency [33,34].…”

Magnetic and magnetoelectric characterization of Ni0.93Co0.02Mn0.05Fe1.95O4 and PZT composites

“…When a magnetic field is applied to the composite, the ferrite particles elongate or contract along the field direction due to magnetostriction and the resulting strain is transferred to the piezoelectric particles giving rise to an electric polarization [1][2][3]. The important applications of these ME materials include ME transformers, sensors, actuators and transducers [4][5][6][7]. The advantage of these materials is that they require no external power to operate since they transmute magnetic field changes into voltage output and vice-versa.…”