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In this work a magnetoelectric (ME) current sensor design based on a magnetoelectric effect is presented and discussed. The resonant and non-resonant type of ME current sensors are considered. Theoretical calculations of the ME current sensors by the equivalent circuit method were conducted. The application of different sensors using the new effects, for example, the ME effect, is made possible with the development of new ME composites. A large number of studies conducted in the field of new composites, allowed us to obtain a high magnetostrictive-piezoelectric laminate sensitivity. An optimal ME structure composition was matched. The characterization of a non-resonant current sensor showed that in the operation range to 5 A, the sensor had a sensitivity of 0.34 V/A, non-linearity less than 1% and for a resonant current sensor in the same operation range, the sensitivity was of 0.53 V/A, non-linearity less than 0.5%.

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One of the new materials that have recently attracted wide attention of researchers are magnetoelectric (ME) composites. Great interest in these materials is due to their properties associated with the transformation of electric polarization/magnetization under the influence of external magnetic/electric fields and the possibility of their use to create new devices. In the proposed review, ME magnetic field sensors based on the widely used structures Terfenol—PZT/PMN-PT, Metglas—PZT/PMN-PT, and Metglas—Lithium niobate, among others, are considered as the first applications of the ME effect in technology. Estimates of the parameters of ME sensors are given, and comparative characteristics of magnetic field sensors are presented. Taking into account the high sensitivity of ME magnetic field sensors, comparable to superconducting quantum interference devices (SQUIDs), we discuss the areas of their application.

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