Magnetoelastic coupling in thin films with weak out-of-plane anisotropy

Ciria, M.; Arnaudas, J.I.; Benito, L.; Fuente, C. de la; Moral, A. del; Ha, J.K.; O’Handley, R. C.

doi:10.1103/physrevb.67.024429

Cited by 22 publications

(16 citation statements)

References 22 publications

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“…The system studied here is a 200-nm Ni film grown epitaxially in a Cu=Ni=Cu=Si001 structure. This system has been studied previously [3][4][5][6] as a model for the technologically relevant phenomenon of perpendicular magnetization. We begin by noting that, for small Ni thickness t, 3 nm < t < 14 nm, a strong perpendicular magnetization is observed by magneto-optic Kerr effect [3], vibrating sample magnetometry (VSM) [4], torque magnetometry and magnetic force microscopy (MFM) [5,7].…”

mentioning

confidence: 99%

Remanence due to Wall Magnetization and Counterintuitive Magnetometry Data in 200-nm Films of Ni

Pilet

et al. 2006

Phys. Rev. Lett.

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200-nm-thick Ni films in an epitaxial Cu/Ni/Cu/Si(001) structure are expected to have an in-plane effective magnetic anisotropy. However, the in-plane remanence is only 42%, and magnetic force microscopy domain images suggest perpendicular magnetization. Quantitative magnetic force microscopy analysis can resolve the inconsistencies and show that (i) the films have perpendicular domains capped by closure domains with magnetization canted at 51 degrees from the film normal, (ii) the magnetization in the Bloch domain walls between the perpendicular domains accounts for the low in-plane remanence, and (iii) the perpendicular magnetization process requires a short-range domain wall motion prior to wall-magnetization rotation and is nonhysteretic, whereas the in-plane magnetization requires long-range motion before domain-magnetization rotation and is hysteretic.

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confidence: 99%

Remanence due to Wall Magnetization and Counterintuitive Magnetometry Data in 200-nm Films of Ni

Pilet

et al. 2006

Phys. Rev. Lett.

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“…The Poisson's ratio of the film is chosen as v f = 0.28 [26] in our calculation. In Figure 2, β x and β y stand for the case of v s = 0.037 [22] , and β ′ x and β ′ y stand for v s = 0.39 [26] , while β is corresponding to the special case of v s = v f . It can be readily seen from Figure 2 that the influence of Poisson's ratio on the positions of two neutral planes is quite different.…”

Section: Neutral Plane Of the Cantilever Systemmentioning

confidence: 99%

“…Then the cantilever may bend, which is motivated either by the internal residual stress of the film [6,7] or the film magnetostriction [16][17][18] . The measurement of this bending deflection can determine conveniently the stress state and the saturation magnetostriction coefficient of the magnetic film [19][20][21][22] . In fact, early in 1976, Klokholm explored the bending problem of such a cantilever system and obtained the analytical expression of the magnetically induced free-end deflection under the assumption of isotropic magnetostriction strain [16] .…”

Section: Introductionmentioning

confidence: 99%

Analysis of film strain and stress in a film-substrate cantilever system

Narsu

Yun

2008

Sci. China Ser. G-Phys. Mech. Astron.

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The bending problem of a magnetic film-nonmagnetic substrate cantilever system is studied by using the principle of energy minimization. Emphasis is placed on the analysis of geometrical and physical parameter dependence of the neutral plane, internal film stress and strain of the cantilever system, and then the influence of such a parameter on the bending characteristic is presented. The results indicate, owing to the anisotropic expanding feature of the magnetostriction, that the neutral plane is generally anisotropic, and moves downwards rapidly with the increasing thickness ratio. Meanwhile, the bounding rigidity of substrate on the film will decrease with the increasing thickness ratio, and thus release the film stress, i.e., it decreases, but the film strain increases. The effect of Poisson's ratio of the materials on the film strain, the stress and the neutral plane in the direction transverse to the magnetization is prominent. For the strain and the stress in the magnetization, however, the role of Poisson's ratio is inconspicuous. This property is due to the initiative elongating (or contracting) feature of the magnetic film along its magnetization. magnetic film-substrate system, strain, stress, neutral plane

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“…For instance, the phenomenological theory proposed recently to explain the ME effect at microwave frequency for laminate piezoelectric/magnetostrictive composites does not take into account of this dependence in a reasonable manner. 10 A recent research 11 on the magnetoelastic behaviors of Cu-Ni/Cu-Si epitaxial films sheds us a light on understanding the dependence mentioned earlier. It was revealed that the magnetostress coupling coefficient is a nonlinear function of the applied magnetic field and temperature.…”

Section: Introductionmentioning

confidence: 95%

Effect of magnetic bias field on magnetoelectric coupling in magnetoelectric composites

Liu

Wan

Liu

et al. 2003

Journal of Applied Physics

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The effect of dc magnetic bias field on the magnetoelectric coupling of a two-component magnetoelectric composite structure is investigated numerically using the finite-element method, in which the nonlinear magnetostress coupling for the magnetostrictive component is taken into account. It is shown that the magnetostress coupling coefficient increases first and then falls down with increasing of the bias field, and this behavior is argued to be responsible for the dependence of magnetoelectric yield on the bias field. The numerical modeling using the ANSYS5.5 finite element algorithm for the Tb0.3Dy0.7Fe1.9-epoxy/Pb(Zr0.52Ti0.48)O3-epoxy composite structure gives fairly consistent results with the experiments.

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Magnetoelastic coupling in thin films with weak out-of-plane anisotropy

Cited by 22 publications

References 22 publications

Remanence due to Wall Magnetization and Counterintuitive Magnetometry Data in 200-nm Films of Ni

Remanence due to Wall Magnetization and Counterintuitive Magnetometry Data in 200-nm Films of Ni

Analysis of film strain and stress in a film-substrate cantilever system

Effect of magnetic bias field on magnetoelectric coupling in magnetoelectric composites

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