Magnetodiode model

Pfleiderer, H.-J.

doi:10.1016/0038-1101(72)90089-5

Cited by 38 publications

(12 citation statements)

References 45 publications

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“…The global vision of new MR sensor (non-recording) applications, products and services was launched out through the next 15 years and beyond. Magnetic field detection has tremendous impact on a large variety of applications and industries [8,9,[11][12][13][148][149][150][151][152], which exploit a wide range of physical phenomena and principles [7,[153][154][155][156][157][158][159][160][161][162][163][164][165][166][167]. To obtain an overview of magnetic field sensing techniques, an analysis of statistics of common magnetic sensors from 1975 to 2017 in the selected patent databases is shown in Figure 3.…”

Section: Roadmap Development Methodologymentioning

confidence: 99%

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

et al. 2019

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Magnetoresistive (MR) sensors have been identified as promising candidates for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. The rapid advance of MR sensor technology has opened up a variety of MR sensor applications. These applications are in different areas that require MR sensors with different properties. Future MR sensor development in each of these areas requires an overview and a strategic guide. A MR sensor roadmap (non-recording applications) was therefore developed and made public by the Technical Committee of The IEEE Magnetics Society with the aim to provide an R&D guide for MR sensors intended to be used by industry, government, and academia. The roadmap was developed over a three-year period and coordinated by an international effort of 22 taskforce members from 10 countries and 17 organizations, including universities, research institutes, and sensor companies. In this paper, the current status of MR sensors for non-recording

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Section: Roadmap Development Methodologymentioning

confidence: 99%

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

et al. 2019

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“…We Ex, k,, 3,. The coefficients gkr and f k s are functions of k , ,so, and Sb, indicated by the subscripts, and also of D*, z, , b. These functions are explicitly given in [20] (using ki = -k instead of k ) . The effective lifetime (3) becomes…”

Section: Theoretical Characteristicsmentioning

confidence: 99%

An ESFI sos magnetodiode

Lilienkamp

Pfleiderer

1977

Phys. Stat. Sol. (a)

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Double injection of holes and electrons into an ESFI® SOS film is observed. As is common with magnetodiodes the application of transverse magnetic inductions influences the current–voltage characteristics due to the lifetime profile of the charge carriers across the film. From the dependence of the current on the magnetic induction it is possible to deduce the average bulk lifetime and the surface recombination velocity at the silicon–substrate interface as functions of the voltage. The lifetime is found to increase with voltage, while the surface recombination velocity decreases. These deductions reflect the additional increase in double injection over a certain voltage range and the appearance of magnetoconductance versus voltage extrema. Thus by means of the magnetodiode effect the recombination properties of an ESFI® SOS film may be checked.

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“…This depletion mode transistor shows complete pinch-off and saturation characteristics with a low frequency transconductance of 70 rnmho/ mm at 300 K and 125 mrnho/mm at 77 K. [3] , A long channel depletion-mode modulation doped field effect transistor (FET) made in this alloy system has also been demonstrated [4]. Owing to a high background impurity concentration in the undoped Gao.471no.5 3 A~ layer (n-type), we found that it was difficult to achieve pinchoff in these FET's when we used the same design rule as in GaAs/A1,Gal-,As selectively-doped FET's [5][6][7][8]. In this letter, we report a 1.2 pm Gao.471no.53As/Alo~481no~52A~ selectively doped depletion mode FET which shows complete pinch-off and good saturation characteristics.…”

mentioning

confidence: 97%

“…The unfioped Gao .47 Ino . 5 3 A~ layer is n-type with a background carrier concentration of -2 X lo1 6cm-3, while the undoped A10.481n0.52A~ layer is semi-insulating. The as-grown heterostructure shows a sheet carrier concentration of 6.1 X IO" cm-2 with a Hall mobility of 7,400 cm2/V sec at room temperature, and a sheet carder concentration of 7.3 X 10"…”

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confidence: 99%

Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection

Vinal

Masnari

1982

IEEE Electron Device Lett.

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Absiraci-Noveldual-base, dual-collector, lateral transistors operating in the presence of dc and ac magnetic fields, demonstrate that the differential current at the collector is the result of emitter injection modulation and not carrier deflection. An understanding of basic operating principles has resulted in the design of optimized lateral-and vertical-injecting transitor configurations. The latter exhibit voltage sensitivities exceeding 20 V/T for NPN silicon, at room temperature, and a signal-to-noise ratio of 10s for a 1 T magnetic field. A frequency response in excess of 50 MHz should be possible for load resistances less than loo0 ohms.

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Magnetodiode model

Cited by 38 publications

References 45 publications

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

An ESFI sos magnetodiode

Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection

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