2017
DOI: 10.1007/s10948-017-4353-5
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Magnetism in Boron Nitride Monolayer Induced by Cobalt or Nickel Doping

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Cited by 23 publications
(10 citation statements)
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“…Doping with magnetic impurities can also lead to magnetic systems. For instance, h-BN monolayers were found to be FM after doping with Co or Ni ions [77]. Combining doping and adsorbing was also predicted as a possible route to induce ferromagnetism in the g-BN system.…”
Section: Introducing Magnetism Into Other Low-dimensional Chalcogenidmentioning
confidence: 98%
“…Doping with magnetic impurities can also lead to magnetic systems. For instance, h-BN monolayers were found to be FM after doping with Co or Ni ions [77]. Combining doping and adsorbing was also predicted as a possible route to induce ferromagnetism in the g-BN system.…”
Section: Introducing Magnetism Into Other Low-dimensional Chalcogenidmentioning
confidence: 98%
“…Therefore, most of the h-BN materials are used as insulating materials [20] [21] and restricts its application in several optoelectronic devices. Various approaches such as doping, vacancy defects, absorption, strain, external electric field, and chemical passivation in the pristine 2D structure [22] [23][23] [24]have been implemented to settle this problem. However, applying an external electric field or strain would considerably make the device configuration complicated [25].…”
Section: Introductionmentioning
confidence: 99%
“…Structurally analogous to graphene is hexagonal boron nitride (h-BN), a van der Waals 2D material with outstanding properties such as chemical inertness, a high thermal stability, low density, excellent mechanical strength, and a wide tunable band gap of ∼5.9 eV. , Previous studies have suggested plausible expansion of the applications of h-BN by tuning its geometrical structure and spin state through adsorption or doping with other TM atoms. Moreover, unlike graphene, the structure of h-BN is composed of heteroatomic elements nitrogen (N) and boron (B), each with different electron distribution, suggesting stronger interaction with transition metals due to its polar nature. TM adsorption site occupancy on h-BN monolayer has triggered further research interest since theoretical work has revealed that hybridization between N and B with individual TM can induce different electronic characteristics . Although numerous studies have been published on TM/graphene interactions, limited information is available on TM/h-BN interactions.…”
mentioning
confidence: 99%