Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

Piquemal-Banci, Maëlis; Galceran, Regina; Caneva, Sabina; Martin, Marie‐Blandine; Weatherup, Robert S.; Kidambi, Piran R.; Bouzéhouane, K.; Xavier, Stéphane; Anane, A.; Pétroff, F.; Fert, A.; Robertson, John; Hofmann, Stephan; Dlubak, Bruno; Sénéor, Pierre

doi:10.1063/1.4943516

Cited by 127 publications

(134 citation statements)

References 27 publications

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“…While many perspectives remain to be explored in terms of functionality and performance (for example it was shown that FM/graphene interfaces could lead to strongly enhanced perpendicular magnetization [51,78], etc), new unique interesting properties have been unveiled in these 2DM-based MTJs in addition to their reduced thickness down to the atomic level. As of now, the most promising road appears to be direct CVD on FM (see the state of the art in figure 2), which has provided the largest spin polarizations to date with graphene [29] (P = −42%) and h-BN [35] (P = 17%), and also unveiled the potential for perpendicular magnetization.…”

Section: Discussionmentioning

confidence: 99%

“…Owing to the knowledge gained through these studies, the integration of h-BN as an ultimately thin tunnel barrier in efficient spin valves has been enabled (see figure 13). In 2016, Piquemal-Banci et al [35] reported on the fabrication of Fe electrodes covered with h-BN and further contacted by Co through the patterning of lithographic junctions. The resulting Fe/h-BN/Co junctions based on this h-BN direct CVD growth on FM exhibited large spin signals for a purely 2D tunnel barrier.…”

Section: Other 2d Materials Beyond Graphene In Magnetic Tunnel Junctionsmentioning

confidence: 99%

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2D-MTJs: introducing 2D materials in magnetic tunnel junctions

Piquemal-Banci

Galceran

Martin

et al. 2017

J. Phys. D: Appl. Phys.

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Section: Discussionmentioning

confidence: 99%

Section: Other 2d Materials Beyond Graphene In Magnetic Tunnel Junctionsmentioning

confidence: 99%

2D-MTJs: introducing 2D materials in magnetic tunnel junctions

Piquemal-Banci

Galceran

Martin

et al. 2017

J. Phys. D: Appl. Phys.

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“…[19][20][21] Theoretically, graphene is predicted as a perfect spin filter due to its unique structure for vertical spin valve junctions. [19][20][21] Theoretically, graphene is predicted as a perfect spin filter due to its unique structure for vertical spin valve junctions.…”

Section: Introductionmentioning

confidence: 99%

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

Iqbal

Siddique

Hussain³

2017

Adv Eng Mater

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The magnetotransport properties of spin valve structure are highly influenced by the type of intervening layer inserted between the ferromagnetic electrodes. In this scenario, spin filtering effect at the interfaces plays a crucial role in determining the magnetoresistance (MR) of such magnetic structures, which can be enhanced by using a suitable intervening layer. Here, the authors investigate the spin filtering effect of the two-dimensional layers such as hexagonal boron nitride (hBN), graphene (Gr), and Gr-hBN hybrid system for modifying the magnetotransport characteristics of the vertical spin valve architectures (Ni/hBN/Ni, Ni/Gr/Ni, and Ni/Gr-hBN/Ni). Compared to graphene, hBN incorporated magnetic junction reveals higher MR and spin polarizations (P) suggesting better spin filtering at the interfaces. The MR for hBN incorporated junction is calculated to be %0.83%, while that of graphene junction it is estimated to be %0.16%. Similar contrast is observed in the 'P' of ferromagnets (FMs) for the two junctions, that is, %6.4% for hBN based magnetic junction and %2.8% for graphene device. However, for Gr-hBN device, the signal not only get inverts, but it also suggests efficient spin filtering mechanism at the FM interfaces. Their results can be useful to comprehend the origin of spin filtering and the choice of non-magnetic spacer for magnetotransport characteristics.

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“…Thicknesses of more than three layers are not suitable for * Author to whom all correspondence should be addressed: m.gurram@rug.nl spin injection [15,17,18] due to very high tunneling interface resistance. However, for large-scale spintronics applications, it is important to incorporate large-area chemical vapor deposition (CVD) grown hBN tunnel barriers in spin valves [18][19][20][21] and magnetic tunnel junctions [22,23]. Therefore, it is interesting to combine high-mobility graphene with the efficient CVD-hBN tunnel barriers for spintronics devices.…”

Section: Introductionmentioning

confidence: 99%

Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

Gurram¹,

Omar²,

Zihlmann

et al. 2018

Phys. Rev. B

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We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO 2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVDhBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVDhBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spininjection polarization of the high-resistance contacts can be modulated by dc bias from −0.3 to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

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Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

Cited by 127 publications

References 27 publications

2D-MTJs: introducing 2D materials in magnetic tunnel junctions

2D-MTJs: introducing 2D materials in magnetic tunnel junctions

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

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