Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

Gurram, Mallikarjuna; Omar, S.; Zihlmann, Simon; Makk, Péter; Li, Q. C.; Zhang, Y. F.; Schönenberger, Christian; Wees, B. J. van

doi:10.1103/physrevb.97.045411

Cited by 22 publications

(43 citation statements)

References 40 publications

(124 reference statements)

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“…In this device, the reversal of the magnetization direction of the ferromagnet leads to a sign change of the nonlocal resistance. Under experimental conditions, 42,43 this nonlocal resistance change ∆R nl = R nl (⇑) − R nl (⇓) can reach tens of Ohms (Ω) and is easily detectable. The second type of device is depicted in Panel b).…”

Section: Fig 7: a Four-terminal Geometry Involving Two Nodesmentioning

confidence: 99%

Spin-dependent electron transmission model for chiral molecules in mesoscopic devices

2019

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Various device-based experiments have indicated that electron transfer in certain chiral molecules may be spin-dependent, a phenomenon known as the Chiral Induced Spin Selectivity (CISS) effect. However, due to the complexity of these devices and a lack of theoretical understanding, it is not always clear to what extent the chiral character of the molecules actually contributes to the magnetic-field-dependent signals in these experiments. To address this issue, we report here an electron transmission model that evaluates the role of the CISS effect in two-terminal and multiterminal linear-regime electron transport experiments. Our model reveals that for the CISS effect, the chirality-dependent spin transmission is accompanied by a spin-flip electron reflection process. Furthermore, we show that more than two terminals are required in order to probe the CISS effect in the linear regime. In addition, we propose two types of multi-terminal nonlocal transport measurements that can distinguish the CISS effect from other magnetic-field-dependent signals. Our model provides an effective tool to review and design CISS-related transport experiments, and to enlighten the mechanism of the CISS effect itself. arXiv:1810.02662v2 [cond-mat.mes-hall]

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Section: Fig 7: a Four-terminal Geometry Involving Two Nodesmentioning

confidence: 99%

Spin-dependent electron transmission model for chiral molecules in mesoscopic devices

2019

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“…To this end, the hybridization of g-C 3 N 4 with other functional materials, including fullerenes, has been developed in recent years and appears feasible since the polymeric nature of g-C 3 N 4 renders the chemical structure flexible. [68][69][70][71][72] For these graphene-analogous 2D nanomaterials, especially g-C 3 N 4 and the TMD MoS 2 , no Review has reported their hybridization with fullerenes, which is crucial for understanding such intriguing 0D-2D hybrid systems. [56][57][58][59][60] MoS 2 , consisting of hexagonal rings with Mo and S atoms alternately located at the hexagon corners, is the most representative TMD with a direct band gap in monolayer form and high in-plane carrier mobility, thus being suitable for versatile applications in electro and photocatalysis, photovoltaics, and photoelectric devices.…”

Section: Introductionmentioning

confidence: 99%

Hybrids of Fullerenes and 2D Nanomaterials

2018

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Fullerene has a definite 0D closed‐cage molecular structure composed of merely sp2‐hybridized carbon atoms, enabling it to serve as an important building block that is useful for constructing supramolecular assemblies and micro/nanofunctional materials. Conversely, graphene has a 2D layered structure, possessing an exceptionally large specific surface area and high carrier mobility. Likewise, other emerging graphene‐analogous 2D nanomaterials, such as graphitic carbon nitride (g‐C3N4), transition‐metal dichalcogenides (TMDs), hexagonal boron nitride (h‐BN), and black phosphorus (BP), show unique electronic, physical, and chemical properties, which, however, exist only in the form of a monolayer and are typically anisotropic, limiting their applications. Upon hybridization with fullerenes, noncovalently or covalently, the physical/chemical properties of 2D nanomaterials can be tailored and, in most cases, improved, significantly extending their functionalities and applications. Here, an exhaustive review of all types of hybrids of fullerenes and 2D nanomaterials, such as graphene, g‐C3N4, TMDs, h‐BN, and BP, including their preparations, structures, properties, and applications, is presented. Finally, the prospects of fullerene‐2D nanomaterial hybrids, especially the opportunity of creating unknown functional materials by means of hybridization, are envisioned.

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“…Surprisingly, theoretical calculation shows that the spin injection efficiency can reach 100% with the increase in the hBN's thickness by using a Ni electrode [68], which has a good lattice match with both the graphene and the hBN. Experimentally, both of exfoliated hBN [72,73] and CVD-hBN [74][75][76][77] have been extensively studied as a tunnel barrier. What's more, it was indicated that a thicker hBN tunneling layer could achieve higher spin polarization [78].…”

Section: Electrical Injection In 2d Materialsmentioning

confidence: 99%

Spintronics in Two-Dimensional Materials

et al. 2020

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HIGHLIGHTS • The recent progress of spin injection, spin transport, spin manipulation, and application in 2D materials was summarized. • The current challenges and outlook of future studies in spintronics based on 2D materials and related heterostructures were discussed. ABSTRACT Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin-valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.

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Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

Cited by 22 publications

References 40 publications

Spin-dependent electron transmission model for chiral molecules in mesoscopic devices

Spin-dependent electron transmission model for chiral molecules in mesoscopic devices

Hybrids of Fullerenes and 2D Nanomaterials

Spintronics in Two-Dimensional Materials

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