HIGHLIGHTS • The recent progress of spin injection, spin transport, spin manipulation, and application in 2D materials was summarized. • The current challenges and outlook of future studies in spintronics based on 2D materials and related heterostructures were discussed. ABSTRACT Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin-valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.

Nonlinear optical effects in layered two-dimensional transition metal chalcogenides have been extensively explored recently because of the promising prospect of the nonlinear optical effects for various optoelectronic applications. However, these materials possess sizable bandgaps ranging from visible to ultraviolet region, so the investigation of narrow-bandgap materials remains deficient. Here, we report our comprehensive study on the nonlinear optical processes in palladium diselenide (PdSe2) that has a near-infrared bandgap. Interestingly, this material exhibits a unique thickness-dependent second harmonic generation feature, which is in contrast to other transition metal chalcogenides. Furthermore, the two-photon absorption coefficients of 1–3 layer PdSe2 (β ~ 4.16 × 105, 2.58 × 105, and 1.51 × 105 cm GW−1) are larger by two and three orders of magnitude than that of the conventional two-dimensional materials, and giant modulation depths (αs ~ 32%, 27%, and 24%) were obtained in 1–3 layer PdSe2. Such unique nonlinear optical characteristics make PdSe2 a potential candidate for technological innovations in nonlinear optoelectronic devices.

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Recent advances in moiré superlattices and moiré excitons, such as quantum emission arrays, low-energy flat bands, and Mott insulators, have rapidly attracted attention in the fields of optoelectronics, materials, and energy research.

Interlayer excitons (IX) are produced by the spatially separated electron-hole pairs due to the robust Coulomb interactions in van der Waals transition metal dichalcogenide (TMDC) heterostructures (HSS). IX is characterized by a larger binding energy, and its lifetime is orders of magnitude longer than that of the direct excitons, providing a significant platform for the manufacture of long-lived exciton devices and the exploration of exciton quantum gas. However, the studies are restricted to the single interlayer exciton, and the simultaneous capture and study of double IX remain challenging in the WSe2/WS2 HS. Here, we demonstrate the existence of double indirect IX in the WSe2/WS2 HS with the emission centers at 1.4585eV (∼25.9meV wide) and 1.4885 eV (∼14.4 meV wide) at cryogenic temperature. Interestingly, the intensities of the double IX emission peaks are almost equal, and the energy difference between them is in a good agreement with the cleavage value of the WS2 conduction band (CB). Additionally, diverse types of excitons in the individual materials were successfully observed in the PL spectra at 8 K. Such unique double IX features, in combination with excellent exciton identification, open up new opportunities for further investigations for new physical properties of TMDCs and explorations for the technological innovation of exciton devices.

Bismuth selenide (Bi2Se3) is a novel topological insulator that is promising for broad optical absorption materials on the basis of its large bulk band and well-defined single Dirac cone. Herein, few-layer Bi2Se3 nanoplates of different sizes have been successfully synthesized via the solvothermal method. We present our discovery of optical properties on homojunction Bi2Se3 nanoplates with FTIR measurements. The interface of homojunction Bi2Se3 nanoplates demonstrates an interesting optical modulation in the near-infrared region in contrast to individual bulk Bi2Se3 and other reported 2D hetero-structure materials. It was validated that the unexpected behavior was attributed to the interface between variously stacked nanoplates and its unique zero-wave anti-reflection properties. Our experimental results provide evidence of the Bi2Se3 nanoplate possess high optical absorption in the near-infrared range, promising for photothermal and optical diagnostic therapy application.

Rhenium disulfide (ReS2) has emerged as a promising material for future optoelectric applications due to its extraordinary electrical, mechanical, and optoelectrical properties. However, the ReS2-based photodetectors are severely restricted by their slow response speed (>10 s). Here, we demonstrate a high-performance polarization-sensitive photodetector based on suspended ReS2. Such a transistor shows an n-type behavior with the mobility of about 14.1 cm2V−1s−1, an on/off ratio of 105, and a responsivity of 0.22 A/W. Benefitting from well-developed contact between Au and the ReS2 channel and reduced interface scattering from the Si substrate, the response time of the device can be as short as 83.5 and 325.3µs, respectively, which are three orders of magnitude faster than that reported earlier. Furthermore, the suspended ReS2 photodetector also has the capability to detect polarized light (Imax/Imin ≈ 1.4 at 532 nm) due to the robust in-plane anisotropy of the material. These findings offer an efficient approach for improving the performance of ReS2-based photodetectors.