2017
DOI: 10.1088/1361-6463/aa650f
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2D-MTJs: introducing 2D materials in magnetic tunnel junctions

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Cited by 80 publications
(97 citation statements)
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References 83 publications
(149 reference statements)
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“…For commercial applications, one needs to grow these materials on a large scale using the chemical vapour deposition (CVD) technology. Recently, the potential of CVD grown 2D materials has been explored for the production of spintronics devices 6,117,129,139,140 . Several studies have shown an increased interest in incorporating CVD grown hBN tunnel barriers for electrical spin injection into both CVD-graphene 125 and exfoliatedgraphene 6,117,118,126 spin valve devices.…”
Section: E Cvd-hbn Tunnel Barriermentioning
confidence: 99%
“…For commercial applications, one needs to grow these materials on a large scale using the chemical vapour deposition (CVD) technology. Recently, the potential of CVD grown 2D materials has been explored for the production of spintronics devices 6,117,129,139,140 . Several studies have shown an increased interest in incorporating CVD grown hBN tunnel barriers for electrical spin injection into both CVD-graphene 125 and exfoliatedgraphene 6,117,118,126 spin valve devices.…”
Section: E Cvd-hbn Tunnel Barriermentioning
confidence: 99%
“…In the 2D materials family, major research efforts have been focused toward van der Waals solids like graphene, hexagonal boron nitride (hBN), MX 2 (M = M, W and X = S, Se), black phosphorus, and many more. 2D materials with a tunable bandgap and high carrier mobility along with magnetic properties can be utilized in magnetoelectric and magnetic storage media . According to the Mermin–Wagner theorem, long‐range magnetic ordering should be absent in 1D or 2D systems because of strong thermal fluctuations.…”
Section: The Structural Optimization Lattice Constant Of the Surface mentioning
confidence: 99%
“…The spin polarization of the tunneling electrons ultimately depends on the electronic structure of the interfaces. Over the last decade, significant research efforts have been dedicated to introduce 2D materials to control and tailor the magnetoresistive response of the interfaces [76]. Boosted by the theoretical prediction of perfect spin filtering by few of its layers [77][78][79][80], graphene has been the first 2D material to be investigated [81][82][83], rapidly followed by insulating h-BN [84][85][86] and semi-conducting transition metal dichalcogenides (TMDCs) [87][88][89][90].…”
Section: Magnetoresistance In 2d Tunnel Junctionsmentioning
confidence: 99%