Magnetic susceptibility of CdxHg1−xTe

Abstract

A study was made of the magnetic susceptibility, Hall effect, and conductivity from 4.2 to 290°K on CdxHg1−xTe crystals prepared by the Bridgman technique and annealed in mercury vapour. The electron and hole concentrations at liquid helium temperature did not exceed 1.5 × 1016 and 3.3 × 1015 cm−3, respectively. Experimental curves relating susceptibility and Hall coefficient to temperature and composition x are presented. An analysis shows the susceptibility of the alloys studied to be a sum of three principal terms associated with the lattice, complex lattice defects, and electronic gas. The diamagnetic susceptibility of the crystal lattice decreases linearly as mercury atoms in the alloy are substituted by cadmium atoms. The paramagnetic susceptibility component due to the polarization paramagnetism of complex lattice defects varies non‐monotonically with composition. The susceptibility of the electron gas experiences an abrupt rise at the semimetal‐semiconductor transition point with a reversal of the susceptibility sign.

Optical absorption in ZnxHg1-xTe thin films

“…For values of the absorption coefficient K less than 5000 cm-1, the theoretical model discussed in the last section shows good agreement with experimental curves for bulk HgTe found by Blue (1964) and Ivanov-Omskii et al (1970). For larger absorption coefficients, the experimental values become greater than those calculated.…”

Nonelastic charge carrier scattering in mercury telluride

“…A comparison of theoretical and experimental temperature dependencies of the Hall coefficient and conductivity for p-HgTe was carried out for the experimental results for sample 14-7 in [1], which at T = 4.2 K had a Hall coefficient of R ∼ 2 cm 3 /C at B = 0.6 T. In order to obtain such a theoretical value of Hall coefficient it is necessary to assume that the ionized acceptor concentration in this sample is equal to N + A ∼ 3.25 × 10 18 cm −3 . A calculation of theoretical curves was then carried out on the basis of the neutrality equation: p − n = N + A .…”

“…Charge carrier scattering mechanisms and the mobility in HgTe have been rather well investigated over a wide temperature range [1][2][3][4][5][6][7][8][9]. These investigations were based on the relaxation time approximation which can be used for elastic scattering mechanisms.…”

The electron–electron interaction in gapless semiconductors

“…The comparison of the experimental data on the electron low temperature mobility in pure HgTe [3] (points in Fig. 1) with the values following froin the Brooks-Herring formula (solid curve) shows that in the range 4 to 100 O K the Fig.…”