Nonelastic charge carrier scattering in mercury telluride

Malyk, O. P.

doi:10.1016/j.jallcom.2003.07.033

Cited by 10 publications

(9 citation statements)

References 11 publications

(16 reference statements)

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“…To calculate the mobility of heavy holes the shortrange scattering models were used on the base of the exact solution of the Boltzmann kinetic equation [24].…”

Section: Dicussionmentioning

confidence: 99%

Transport phenomena in copper doped cadmium telluride: calculation from the first principles

Malyk¹,

Petrovych²,

Kenyo³

2022

CPEE

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In the presented work, the method of determining the energy spectrum, the wave function of the heavy hole and the crystal potential in CdTe at an arbitrarily given temperature is considered. Using this approach within the framework of the supercell method the temperature dependences of the ionization energies of various types of defects caused by the introduction of copper impurity in cadmium telluride are calculated. Also the proposed method makes it possible to define the temperature dependence of the optical and acoustic deformation potentials, as well as the temperature dependence of the scattering parameters of heavy holes on ionized impurities, polar optical, piezooptical and piezoacoustic phonons. Within the framework of short-range scattering models, the temperature dependences of the heavy hole mobility and Hall factor are considered.

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“…To calculate the mobility of heavy holes the shortrange scattering models were used on the base of the exact solution of the Boltzmann kinetic equation [24].…”

Section: Dicussionmentioning

confidence: 99%

Transport phenomena in copper doped cadmium telluride: calculation from the first principles

Malyk¹,

Petrovych²,

Kenyo³

2022

CPEE

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“…Solid curves 3 were calculated on the basis of the shortrange scattering models within the framework of the exact solution of Boltzmann's kinetic equation. 32 Dashed curves 1 and 2 were calculated on the basis of the long-range scattering models within the framework of relaxation time approximation (see Appendix B in Ref. 5): curve 1 corresponds to the case of low temperatures hx > > k B T ð Þ, whereas curve 2 corresponds to the case of high temperatures hx < < k B T ð Þ .…”

Section: Comparison Of Theory and Experimentsmentioning

confidence: 99%

Local Electron Interaction with Point Defects in Sphalerite Zinc Selenide: Calculation from First Principles

Malyk

Syrotyuk

2018

Journal of Elec Materi

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The present article deals with the description of electron scattering on the different types of point defects in zinc blende ZnSe on the basis of short-range principles. The electron interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, neutral and ionized impurities and static strain centers is considered. The electron transition probabilities and, respectively, the kinetic coefficients in zinc selenide, were calculated using the numerical eigenfunction and self-consistent potential obtained within the ab initio density functional theory. The latter were evaluated using the projector augmented waves formalism as implemented in the ABINIT software suite. We investigated ZnSe samples with defect concentration 4.7 9 10 15 -1.08 9 10 17 cm À3 , then calculated temperature dependencies of electron mobility and Hall factors in the range of 20-400 K. It is shown that the theoretical curves obtained in the framework of short-range scattering models much better coincide with experimental data than the curves calculated on the basis of long-range scattering models.

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“…Solid curve 1 was obtained on the base of the shortrange scattering models within the framework of the exact solution of the Boltzmann kinetic equation [23] The adjustable parameter NSS for these curves has next numerical value: sample A -NSS  1.610 14 cm -3 ; sample B -NSS  4.0  10 14 cm -3 ; sample C -NSS  3.0  10 15 cm -3 ; sample D -NSS  3.510 16 cm -3 . Dashed curves 2 and 3 were calculated on the base of the long-range scattering models within the framework of relaxation time approximation: curve 2 corresponds О.P MALYK, S.V.…”

Section: Comparison Of Theory and Experimentsmentioning

confidence: 99%

Electron Scattering on the Short-range Potential of the Point Defects in Sphalerite GaN: Calculation from the First Principles

Malyk¹,

Syrotyuk²

2017

J. Nano- Electron. Phys.

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The electron scattering processes in sphalerite gallium nitride on the different lattice point defects are considered. The short-range principle is taken into account in all the calculations. The transition matrix elements have been evaluated by using the self-consistent wave function and potential obtained within the ab initio density functional theory. This approach avoids the problem of using the fitting parameters for the six electron scattering mechanisms. The temperature dependences of electron mobility in the range 30-300 K are calculated. The results obtained with short-range scattering models reveal a better agreement with experiment than with the long-range scattering ones. For the first time the electron transport properties have been obtained here on base of the short-range scattering models, with derived by projector augmented waves self-consistent eigenfunctions and potentials, calculated from the first principles.

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Nonelastic charge carrier scattering in mercury telluride

Cited by 10 publications

References 11 publications

Transport phenomena in copper doped cadmium telluride: calculation from the first principles

Transport phenomena in copper doped cadmium telluride: calculation from the first principles

Local Electron Interaction with Point Defects in Sphalerite Zinc Selenide: Calculation from First Principles

Electron Scattering on the Short-range Potential of the Point Defects in Sphalerite GaN: Calculation from the First Principles

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