Thin films of Hg,-,ZnxTe were deposited onto Corning 7059 glass substrates using the coevaporation of HgTe with ZnTe. Layers were produced with bandgaps in the range 0.6 -2.25 eV by altering the alloy composition.These layers had absorption coefficients > l o 5 cm-l and as high as 6 x l o 5 cm-l in samples with E >1 5 eV The samples were p-type at 300 K with low gresi&ities (= 0.5 Rcm) and Hall mobilities in the range 2 -12 cm2V-ls-l for layers <0.5 pm thick. Arrhenius plots of the resistivities gave two straight lines corresponding to an activation energy of 50 +5 meV for temperatures >220K and an activation energy of 7 *4 meV for temperatures <220K. The layers consisted of columnar grains and the grain size increased with film thickness and with post-growth annealing in argon. Heterojunctions with CdS and Cd, -xZn$ window layers had I-V charactersitics which were rectifying and these devices exhibited the photovoltaic effect.