Magnetic properties and structure of Pd/Co and Pd/Fe multilayers

Broeder, F. J. A. den; Donkersloot, H. C.; Draaisma, H. J. G.; Jonge, W. J. M. de

doi:10.1063/1.338459

Cited by 233 publications

(48 citation statements)

References 7 publications

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“…The magnetization of the multilayer remains out-of-plane if the effective magnetic anisotropy K ef f Ͼ 0. For Co/ Pt multilayers K ef f can be written as 14,21 …”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

IrMn as exchange-biasing material in systems with perpendicular magnetic anisotropy

Dijken

Besnier

Moritz

et al. 2005

Journal of Applied Physics

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Contact between a Co/ Pt multilayer and an IrMn film leads to perpendicular exchange bias. The exchange bias field does not depend on the degree of ͑111͒ film texture and for Co/ Pt multilayers with IrMn at the bottom it can be enhanced by magnetic field annealing. The perpendicular exchange bias of the Co/ Pt-IrMn system is limited by a misalignment between the Co spins and the film normal, which is due to a negative magnetic anisotropy contribution from the Co/ IrMn interface ͑K S Co/IrMn = −0.09 mJ/ m 2 ͒. The insertion of a 3 Å thick Pt layer at the Co/ IrMn interface maximizes the perpendicular exchange-bias field. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.1855699͔ Exchange-biased ferromagnetic ͑FM͒ films with in-plane magnetization are utilized in applications such as read heads, magnetic sensors, and magnetic random access memory. Exchange bias in these structures is established by contacting the FM film with an antiferromagnetic ͑AFM͒ layer and the effect manifests itself by a shift in the hysteresis loop and enhanced coercivity. 1 For practical applications, IrMn is an interesting AFM material since it combines good corrosion resistance with relatively high interfacial exchange energy, high blocking temperature ͑T B Ϸ 250°C͒, and small critical thickness. [2][3][4][5][6][7] Although it has been intensively studied for systems with in-plane magnetization, it has hardly been used in recent studies on perpendicular exchange bias. [8][9][10][11][12][13][14][15][16][17][18] In a recent paper, Sort et al. showed that Co/ Pt multilayers with out-ofplane magnetization can be biased by growing an IrMn layer on top. 19 In this paper we present an overview on the exchange-biasing properties of IrMn in systems with perpendicular magnetic anisotropy. We show that Co/ Pt multilayers with an IrMn film on top or at the bottom exhibit a considerable perpendicular exchange bias in the as-deposited state. Magnetic field annealing ͑bottom-pinned structures͒ and/or the insertion of a thin Pt layer at the Co/ IrMn interface further enhances the exchange-bias field.The Co/ Pt multilayers were deposited by dc magnetron sputtering onto thermally oxidized Si substrates. A metal shadow mask was used to define Hall bars with a linewidth of 200 m. The relatively large extraordinary Hall effect ͑EHE͒ of the Co/ Pt-IrMn structures, which depends linearly on the out-of-plane moment, was utilized to measure the exchange bias field, the coercivity, and the perpendicular magnetic anisotropy. The crystalline structure of the multilayers was characterized with x-ray diffraction ͑XRD͒. For the field annealing experiments we used a vacuum furnace ͑p Ͻ 1 ϫ 10 −6 mbar͒ and a superconducting magnet. Figure 1 clearly shows that Co/ Pt multilayers with outof-plane magnetization can exhibit perpendicular exchange bias when covered with or grown on top of an IrMn layer. In the as-deposited state the exchange-bias field is largest for Co/ Pt multilayers with IrMn on top. In this case, domain formation in the antiferromagnetic IrMn film i...

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“…The magnetization of the multilayer remains out-of-plane if the effective magnetic anisotropy K ef f Ͼ 0. For Co/ Pt multilayers K ef f can be written as 14,21 …”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

IrMn as exchange-biasing material in systems with perpendicular magnetic anisotropy

Dijken

Besnier

Moritz

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

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“…A magnetic moment is induced by the ferromagnetic proximity effect in a Pd or Pt layer deposited on a ferromagnetic metal layer [40][41][42][43][44][45]. Figure 2A shows the Co thickness t Co dependence of the saturation magnetic moment per unit area (m s /S) at 10 K for the Pt(4.1 nm)/Co(t Co ) and Pt(4.1 nm)/Co(t Co )/Pd(1.7 nm) samples.…”

Section: Electric Field Control Of Magnetic Moment In Pdmentioning

confidence: 99%

Electric field effect on magnetism in metallic ultra-thin films

Chiba

2015

Front. Phys.

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Citation:Chiba D (2015) Electric field effect on magnetism in metallic ultra-thin films. Front. Phys. 3:83. doi: 10.3389/fphy.2015.00083 Electric field effect on magnetism in metallic ultra-thin films Daichi Chiba * Department of Applied Physics, The University of Tokyo, Tokyo, JapanRecent experimental developments on the electric field effect on magnetism in metallic magnetic materials are reviewed. The change in the electron density at the surface of metallic ultra-thin magnets by the application of an electric field results in modulations of the Curie temperature, magnetic moment, magnetic anisotropy, and domain wall velocity. The study focused on this paper is the electric field effect on the Curie temperature (magnetic phase transition) in Pt/Co ultra-thin film systems. Electric field modifications of the magnetic moment induced by ferromagnetic proximity effects in Pd, which is usually a nonmagnetic element, are also discussed.

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“…These structures show PMA for certain thicknesses of the magnetic and TM layers. [47][48][49] This bilayer stack structure needs to be deposited for several periods to provide a strong PMA. 50 This multilayer structure is just like the basic structure of a superlattice of one magnetic layer (e.g.…”

Section: Materials For Computing With Spins and Magnetsmentioning

confidence: 99%

Computing with spins and magnets

2014

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Abstract:The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and reconfigurable information processing over transistors. Logic devices having a transistor-like gain and directionality could be used to build integrated circuits without the need for transistor-based amplifiers and clocks at every stage. We review device characteristics and basic logic gates that compute with spins and magnets from the mesoscopic to the atomic scale, as well as materials, integration, and fabrication challenges and methods.

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Magnetic properties and structure of Pd/Co and Pd/Fe multilayers

Cited by 233 publications

References 7 publications

IrMn as exchange-biasing material in systems with perpendicular magnetic anisotropy

IrMn as exchange-biasing material in systems with perpendicular magnetic anisotropy

Electric field effect on magnetism in metallic ultra-thin films

Computing with spins and magnets

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