Electric field effect on magnetism in metallic ultra-thin films

Abstract

Citation:Chiba D (2015) Electric field effect on magnetism in metallic ultra-thin films. Front. Phys. 3:83. doi: 10.3389/fphy.2015.00083 Electric field effect on magnetism in metallic ultra-thin films Daichi Chiba * Department of Applied Physics, The University of Tokyo, Tokyo, JapanRecent experimental developments on the electric field effect on magnetism in metallic magnetic materials are reviewed. The change in the electron density at the surface of metallic ultra-thin magnets by the application of an electric field results in modulations of the Curie temperature, magnetic moment, magnetic anisotropy, and domain wall velocity. The study focused on this paper is the electric field effect on the Curie temperature (magnetic phase transition) in Pt/Co ultra-thin film systems. Electric field modifications of the magnetic moment induced by ferromagnetic proximity effects in Pd, which is usually a nonmagnetic element, are also discussed.

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

“…An ionic gate, however, dramatically raises the 𝑻 𝒄 up to room temperature, significantly higher than the bulk 𝑻 𝒄 of 205 Kelvin. The gate-tunable room-temperature ferromagnetism in twodimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics 14,15 based on atomically thin van der Waals crystals.…”

Control of Magnetism in Dilute Magnetic Semiconductor (Ga,Mn)As Films by Surface Decoration of Molecules

“…More intriguing, electrical switching of FeCo and CoFeB ultrathin films in magnetic tunnel junctions (MTJs) has also been realized, laying the groundwork for their potential applications in MRAM [33][34][35][36][37][38]. For more details about the electric-field effects on magnetism in metals, the readers can refer to several recent review papers [19,[37][38][39]. Besides, combining the ferroelectric and ferromagnetic materials in a heterostructure, non-volatile electric-field control of magnetism in (Ga,Mn)As has also been demonstrated [40].…”

“…For example, the gate voltage-controlled magnetic anisotropy first demonstrated in DMS [17,18,21] was utilized in ferromagnetic metal based MTJs [33][34][35][36][37][38][39]. On the other hand, it continues to be of fundamental interest to explore new means and examine the extent of tuning the magnetism reversibly with minimal changes in temperature.…”

“…Although the application of DMSs is limited due to their low T C , many novel ideas and results extracted from research on DMS have inspired further work in many ferromagnetic metals now used in practical devices [19,[33][34][35][36][37][38][39]. For example, the gate voltage-controlled magnetic anisotropy first demonstrated in DMS [17,18,21] was utilized in ferromagnetic metal based MTJs [33][34][35][36][37][38][39].…”

Electric Field Control of Magnetism of a Mn Dimer Supported on a Carbon-Doped h-BN Surface

“…From an experimental point of view, through the tip of a scanning tunneling microscope the EEF can be applied locally to the system. Previous experimental studies reported that magnetization, magnetic exchange interactions, and magnetic anisotropy can be controlled and modified by EEF in multiferroic heterostructures − (due to coupling between electric field with magnetization through electric polarization), metal thin films − (due to shifting of the Fermi level at the interfaces), semiconductors − (due to change in charge carrier density), nanomagnets, magnetic tunnel junctions (MTJs) , (due to change in charge carrier population), and magnetic nanomesh . In addition, first-principles calculations also reported that the magnetism exhibited in the nanostructures like magnetic clusters, MTJs, metallic surfaces, metallic thin films, and so on can be controlled through EEF. ,,− However, manipulation of magnetism in a TM cluster above a 2D nonmetallic planar heterostructures by simultaneous variation of EEF and concentration fraction of the substrate has rarely been reported.…”