Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

A Facile and Effective Method for Patching Sulfur Vacancies of WS2 via Nitrogen Plasma Treatment

“…High‐performance transistors can be used in a variety of leading‐edge cross‐cutting fields, such as biosensors and artificial intelligence . The importance of obtaining high‐performance field‐effect transistors (FETs) motivates the search for new materials . Due to unique optoelectronic, electronic and chemical properties, transition metal dichalcogenides (TMDs) are attractive for use in the next‐generation high‐performance nanoelectronic era and substantial advancements in this field have been witnessed in the last several decades .…”

Van der Waals magnets: Wonder building blocks for two‐dimensional spintronics?

“…Ionic gating has been adopted by the group of Zhang et al to engineer the Curie temperature of FGT trilayer devices ( Figure 4E). 82 They found that the gate-tunable ferromagnetism in FGT is in agreement with the Stoner model, which is dictated by the density of states at the Fermi level. The gatetuned ferromagnetism was later explained by Jang et al, who revealed by detailed first-principle studies that FGT is actually not ferromagnetic but antiferromagnetic in its stoichiometric phase, and that electron doping induces a antiferromagnetic to ferromagnetic transition.…”

“…Figure D displays the magnetic domain images for unpatterned, micro‐sized diamond‐shaped and rectangular patterned structures at 300 K. Unlike the unpatterned FGT flakes with a single domain configuration, the in‐plane magnetization component within the patterned FGT microstructures not only remains but also develops into a magnetic vortex state in the diamond‐shaped microstructures and a magnetic domain state in the rectangular structure, respectively. Ionic gating has been adopted by the group of Zhang et al to engineer the Curie temperature of FGT trilayer devices (Figure E) . They found that the gate‐tunable ferromagnetism in FGT is in agreement with the Stoner model, which is dictated by the density of states at the Fermi level.…”

“…81 D, Magnetic domain images for unpatterned, micro-sized diamond-shaped and rectangular patterned structures at 300 K. 80 E, Schematic of the FGT device structure and measurement set up (left panel). 82 F, Phase diagram of the trilayer FGT samples as a function of magnetic field and temperature at a gate voltage of 2.1 V (right panel). 82 G, Average crystal structure obtained from single crystal X-ray diffraction data of Fe 5 GeTe 2 .…”

“…82 F, Phase diagram of the trilayer FGT samples as a function of magnetic field and temperature at a gate voltage of 2.1 V (right panel). 82 G, Average crystal structure obtained from single crystal X-ray diffraction data of Fe 5 GeTe 2 . 83 H, Longitudinal Hall resistance verses parallel and perpendicular magnetic field at 270 K 83…”