We report controlled formation of sub-100 nm-thin electron channels in SrTiO 3 by doping with oxygen vacancies induced by Ar + -ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000 cm 2 V 1 s 1 ), which enables clear observation of magnetic quantum oscillations, and gate-tunable linear magnetoresistance. Near the onset of electrical conduction, the metal-insulator transition is induced by the mobility suppression.With the high electron mobility and the ease of controlled channel formation, this ion-irradiation doping method may provide an excellent basis for developing oxide electronics.