Magnetic field and voltage noise in type-II superconductors

Plaçais, Bernard; Mathieu, P.; Simon, Y.

doi:10.1103/physrevb.49.15813

Cited by 20 publications

(44 citation statements)

References 27 publications

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“…This has been consistently explained by description of the BBN relying on ultrafast surface fluctuations of the critical current reflecting the pinning potential independently of the line velocity and of macroscopic reordering. 16,22 We do not find any direct correlation between the NBN and the BBN magnitudes when the current is increased. After surface irradiation of the sample, we observed a dramatic change in the BBN properties, with a strong increase of its magnitude, 22 and the NBN is not observed anymore.…”

Section: B Discussionmentioning

confidence: 79%

“…BBN is quite general and possibly ambiguous: detailed investigation is needed to elucidate its origin. 15,16 In contrast, the observation of NBN is itself an information. This is a probe of temporal coherence.…”

Section: Introductionmentioning

confidence: 80%

“…The first one is a BBN corresponding to the flux-flow noise and has been deeply investigated by several authors. 15,16,22 The second feature of the voltage spectra is characterized by a sharp peaks centered at frequencies ranging from 10 to about 40 Hz. These narrow-band contributions to the noise spectra, or NBN, appears simultaneously at frequencies which are the multiples of a fundamental frequency f c .…”

Section: Methodsmentioning

confidence: 99%

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Narrow-band noise due to the moving vortex lattice in superconducting niobium

Pautrat

Scola

2009

Phys. Rev. B

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We report measurements of voltage noise due to vortex motion in Niobium, a conventional low-T c superconductor. A coherent oscillation leading to narrow-band noise ͑NBN͒ is evidenced. Its characteristic frequency is a linear function of the overcritical transport current in the flux-flow regime, and hence scales as the main velocity of the vortex flow. The associated length scale is not the intervortex distance but the width of the sample, indicating temporal coherence at a large scale. NBN is also observed in the nonlinear part of the V͑I͒ at the onset of depinning, in apparent disagreement with a stochastic creep motion of flux bundles. NBN exists in the peak effect region, showing that long-range temporal correlations are preserved in this regime.

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Section: B Discussionmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 80%

Section: Methodsmentioning

confidence: 99%

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Narrow-band noise due to the moving vortex lattice in superconducting niobium

Pautrat

Scola

2009

Phys. Rev. B

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“…The lower frequency limit of the experimental bandwidth is set by the inverse of the average RTN lifetime, f min = 1/τ [23][24][25]. To compare the real intensities of the background noise at distinct RTN level and to establish whether quiet and noisy metastable states exist in physical reality one should calculate the variance ratio directly from (2). This requires the functional form of S(f bckgnd ) for the background noise.…”

Section: Methodsmentioning

confidence: 99%

“…In good quality high-T c superconducting (HTSC) samples the dissipation caused by the flow of transport currents along the superconducting planes is dominated by dissipative flux processes. Flux noise due to randomness in vortex matter dynamics converts into observable voltage fluctuations by means of an intrinsic flux-to-voltage conversion mechanism [1][2][3]. Low frequency flux and voltage noise in HTSC systems typically appears as wide band Gaussian fluctuations with a 1/f -like power spectral density (PSD).…”

Section: Introductionmentioning

confidence: 99%

Quiet and noisy metastable voltage states in high-Tc superconductors

2000

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The interaction between the telegraph noise and background voltage fluctuations in the current induced dissipative state of high-T c BiSrCaCuO thin films has been investigated. Experimental time records of the voltage drop across current biased thin film strips show markedly different background noise traces in the up and down telegraph states. Detailed analysis demonstrates that fluctuations around the telegraph voltage levels are due to a unique background noise process. The apparent quiet and noisy voltage states are due only to differences in the effective frequency bandwidth at which background noise is seen at distinct telegraph levels. Changes of the background noise variance ratio with changing bias current follow changes of the statistical average lifetimes of the random telegraph process.

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