A new procedure for analysis of random telegraph signals in time domain has been developed and applied to the analysis of voltage fluctuations in the current induced dissipative state in superconducting thin films. The procedure, based entirely on the difference in the statistical properties of discrete Marcovian telegraph fluctuations and Gaussian background noise, ascribes each point of the experimental time record to one of the telegraph states. The average statistical lifetimes and amplitudes of the telegraph signal are then determined in an iterative way by fitting the amplitude histogram of thus obtained record of the redistributed data to the two-Gaussian histogram of the original experimental signal. The procedure allows for analyzing “noisy” random telegraph signals with low ratio between the signal amplitude and the intensity of the background noise that cannot be analyzed by the classical approach. Separation of the time record into two subrecords relative to two telegraph states also enables in-depth analysis of the spectral properties of the background noise observed together with the telegraph fluctuations.
The resistivity of La0.82Ca0.18MnO3 single crystal has been investigated as a function of external magnetic field and separately under an applied current flow. The measurements were carried out at various temperatures below and above the ferromagnetic transition temperature TC. It has been found that the dynamic electroresistance exhibits stunning similarities to the colossal magnetoresistance at the corresponding temperatures. The correlation observed between the electric- and magnetic-field effects is attributed to electrically induced magnetoresistance.
1 ∕ f noise in current biased La0.82Ca0.18MnO3 crystals has been investigated. The temperature dependence of the noise follows the resistivity changes with temperature, suggesting that resistivity fluctuations constitute a fixed fraction of the total resistivity, independently of the dissipation mechanism and magnetic state of the system. The noise scales as a square of the current as expected for equilibrium resistivity fluctuations. However, at 77K at bias exceeding some threshold, the noise intensity starts to decrease with increasing bias. The appearance of nonequilibrium noise is interpreted in terms of bias dependent multistep indirect tunneling.
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