Magnetic exchange interactions in Mn doped ZnSnAs2 chalcopyrite

Bouhani-Benziane, H.; Sahnoun, O.; Sahnoun, M.; Driz, M.; Daul, Claude

doi:10.1016/j.jmmm.2015.08.025

Cited by 18 publications

(2 citation statements)

References 21 publications

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“…Such ferromagnetic properties could be explained using a magnetic percolation model, [25][26][27][28] together with the model of carrier-induced ferromagnetism. 29,30) However, the mechanism of room-temperature ferromagnetism in (Zn,Sn,Mn)As 2 is still under debate.…”

Section: Relationship Between Cationic Flux and Magnetismmentioning

confidence: 99%

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

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Hidaka

Toyota

et al. 2017

Jpn. J. Appl. Phys.

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The effects of cationic growth parameters of molecular beam epitaxy on the crystalline and magnetic properties of Mn-doped ZnSnAs2, (Zn,Sn,Mn)As2, thin films were investigated in order to control ferromagnetism at room temperature. The combination of cationic beam equivalent pressures of Zn, Sn, and Mn atoms was varied at an optimal substrate temperature of 320 °C. Clear hysteresis loops were observed for the samples at 300 K, indicating ferromagnetism at room temperature. We found that the change in Zn flux does not significantly affect the composition of (Zn,Sn,Mn)As2 thin films and ferromagnetic properties and that ferromagnetic properties definitely depend on the amounts of Mn and Sn fluxes. X-ray photoelectron spectroscopy analysis revealed that the sum of the amounts of Mn2+ and Mn4+, which may contribute to the ferromagnetism in (Zn,Sn,Mn)As2 thin films, was approximately 60–70% of the total Mn amount with respect to ferromagnetic (Zn,Sn,Mn)As2 samples. This result indicates that the ferromagnetic properties could be controlled in multilayered (Zn,Sn,Mn)As2 by changing the combination of Zn, Sn, and Mn fluxes.

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Section: Relationship Between Cationic Flux and Magnetismmentioning

confidence: 99%

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

Ogo

Hidaka

Toyota

et al. 2017

Jpn. J. Appl. Phys.

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“…In parallel, significant theoretical works have investigated the physical properties of both ZnSnAs 2 and ZnGeAs 2 . The effect of Mn-doping concentration on electronic and magnetic properties of ZnSnAs 2 was reported [22]. The effect of changing local environment on electronic properties of ZnSnAs 2 was explored in [23].…”

Section: Introductionmentioning

confidence: 99%

Effect of ${p}\mbox{--}{d}$ hybridization on half metallic properties of some diluted ${\bf{II}}\mbox{--}{\bf{IV}}\mbox{--}{{\bf{V}}}_{2}$ chalcopyrites for spintronic applications

Zriouel¹,

Taychour²,

Drissi³

2020

Phys. Scr.

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Based on the ab initio electronic structure calculations performed by Korring–Kohn–Rostoker method combined with the coherent potential approximation, the effect of transition metals impurities on the electronic states and magnetic properties of ZnXAs2 (X = Sn, Ge) chalcopyrites has been investigated. Electronic density of states, Curie temperature TC, ferromagnetic (FM), antiferromagnetic (AF) and spinglass-like (DLM) energies and their variation as well as crystal field splitting energy ΔCF and exchange interactions Δe and are all discussed in detail. The analysis of the densities of states of Zn(Sn, TM)As2 and Zn(Ge, TM)As2 shows that these compounds exhibit half-metallic character and high-spin ferromagnetic state. The importance of different exchange mechanisms like double exchange, ferromagnetic and antiferromagnetic super-exchange in Zn(Sn, TM)As2 and Zn(Ge, TM)As2 chalcopyrites is also discussed. The result as derived in this report shows that and doped ZnSnAs2 and ZnGeAs2 chalcopyrites exhibit a stable ferromagnetic half metallic state, whereas doping manifests antiferromagnetic and spinglass-like states. These results make Zn(Sn, TM)As2 and Zn(Ge, TM)As2 chalcopyrites useful for spintronic applications.

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Review on Optoelectronic Response of Emerging Solar Photovoltaic Materials

Khan

Gaur

Sharma

et al. 2021

Energy Systems and Nanotechnology

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Magnetic exchange interactions in Mn doped ZnSnAs2 chalcopyrite

Cited by 18 publications

References 21 publications

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

Effect of ${p}\mbox{--}{d}$ hybridization on half metallic properties of some diluted ${\bf{II}}\mbox{--}{\bf{IV}}\mbox{--}{{\bf{V}}}_{2}$ chalcopyrites for spintronic applications

Review on Optoelectronic Response of Emerging Solar Photovoltaic Materials

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Magnetic exchange interactions in Mn doped ZnSnAs2 chalcopyrite

Cited by 18 publications

References 21 publications

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs2thin films

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs2thin films

Effect of ${p}\mbox{--}{d}$ hybridization on half metallic properties of some diluted ${\bf{II}}\mbox{--}{\bf{IV}}\mbox{--}{{\bf{V}}}_{2}$ chalcopyrites for spintronic applications

Review on Optoelectronic Response of Emerging Solar Photovoltaic Materials

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Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films