Summary
In this paper, we present the first principle investigations for structural and optoelectronic properties of pure, n‐type, p‐type, and co‐doped MgSiP2 chalcopyrite compounds. To examine the structural and optoelectronic response, density functional theory (DFT) as embodied in Wien2k method is utilized. Within DFT, we have considered the exchange correlation functional prescribed by Perdew‐Burke‐Ernerhof generalized gradient approximation and Tran‐Blaha modified Becke Johnson for all computation presented in this paper. The results obtained from present calculations are in well reconciliation with previously reported experimental and theoretical data for pure compound, which affirms the accuracy of present computations. The electronic responses of all compounds are investigated through the crystal structure, energy band structure, and density of states. Optical responses of studied compounds are explained in terms of dielectric tensor, absorption, reflectivity, and refractivity spectra. Drastic change in energy band gap from pure (2.04 eV) to co‐doped compound (0.30 eV) is observed. The obtained band gaps and absorption range confirm the utility of these compounds in photovoltaic application.
The double perovskite compound, Ba2AgIO6 has been studied through density functional theory to explore its mechanical, electronic, and optical properties. To examine the mechanical stability of the compound, elastic constants, Young’s modulus, bulk modulus and shear modulus have been computed. The computed electronic properties show the direct band gap semiconducting nature of the studied perovskite compound. The optical properties of Ba2AgIO6 are interpreted with the help of energy dependent dielectric tensor, absorption, reflection, refraction, and energy loss spectra. From the present study it is found that Ba2AgIO6 is suitable for the various photovoltaic and optoelectronic applications.
A series of Ca-based novel chalcopyrite compounds have been studied by means of the full-potential linearized augmented plane wave method. In this work, we have used one of the utmost precise exchange and correlation functional of Tran-Blaha modified Becke Johnson (TB-mBJ) for the investigation of electronic as well as optical properties of Ca based chalcopyrite compounds namely, CaXY2 (X = Ge, Sn; Y = N, P, As). The computed energy bands and density of states reveals the semiconducting nature of all these studied compounds. The bandgap of CaXY2 (X = Ge, Sn; Y = N, P, As) compounds are found within the energy range 1.60–3.74 eV. The frequency dependent optical properties are investigated here, to understand the probable usage of these Ca-based chalcopyrite’s in optoelectronic applications. The imaginary dielectric tensors are presented and explained in terms of inter-band transitions. The integrated absorption coefficients are calculated to interpret the absorption spectra of all studied compounds.
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