Based on the ab initio electronic structure calculations performed by Korring–Kohn–Rostoker method combined with the coherent potential approximation, the effect of transition metals impurities on the electronic states and magnetic properties of ZnXAs2 (X = Sn, Ge) chalcopyrites has been investigated. Electronic density of states, Curie temperature TC, ferromagnetic (FM), antiferromagnetic (AF) and spinglass-like (DLM) energies and their variation as well as crystal field splitting energy ΔCF and exchange interactions Δe and
are all discussed in detail. The analysis of the densities of states of Zn(Sn, TM)As2 and Zn(Ge, TM)As2 shows that these compounds exhibit half-metallic character and high-spin ferromagnetic state. The importance of different exchange mechanisms like double exchange, ferromagnetic and antiferromagnetic super-exchange in Zn(Sn, TM)As2 and Zn(Ge, TM)As2 chalcopyrites is also discussed. The result as derived in this report shows that
and
doped ZnSnAs2 and ZnGeAs2 chalcopyrites exhibit a stable ferromagnetic half metallic state, whereas
doping manifests antiferromagnetic and spinglass-like states. These results make Zn(Sn, TM)As2 and Zn(Ge, TM)As2 chalcopyrites useful for spintronic applications.
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