Magnetic decoupling in sputtered Fe/Si superlattices and multilayers

Fullerton, Eric E.; Mattson, J. E.; Lee, S. R.; Sowers, C. H.; Huang, Y. Y.; Felcher, G. P.; Bader, S. D.; Parker, F. T.

doi:10.1063/1.352640

Cited by 71 publications

(44 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Heterostructural junctions comprising ferromagnetic and semiconducting layers such as GaMnAs/GaAs [5], GaMnAs/AlAs [6,7], Fe/Si [8,9,10], and Fe/Fe1-xSix [11,12] has received attention from physical and practical viewpoints, since the electric state of semiconductors is changeable by irradiating and heating (cooling), resulting in a change in the magnetoresistance (MR) effect.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

Ishibashi¹,

Kobayashi²,

Nakashima³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

View full text Add to dashboard Cite

Fe3Si/FeSi2/Fe3Si trilayered junctions were fabricated by facing targets direct-current sputtering combined with a mask method, and the spin valve signals of the junctions were studied in the temperature range from 50 to 300 K. Whereas the magnetoresistance ratio of giant magnetoresistance and tunnel magnetoresistance junctions monotonically increases with decreasing temperature, that of our samples has the maximum value around 80 K and decreases with decreasing temperature at lower than 80 K, which might be due to an increase in the electrical conductivity mismatch between the metallic Fe3Si layers and semiconducting FeSi2 interlayer in the low temperature range .

show abstract

Section: Introductionmentioning

confidence: 99%

Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

Ishibashi¹,

Kobayashi²,

Nakashima³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

View full text Add to dashboard Cite

show abstract

“…According to previous works on the Fe-Si interfaces, 3,5,11,12,15,[27][28][29][30][31] these compounds would have a magnetic Fe 1Àx Si x alloy, and a paramagnetic silicide. The non-stoichiometric c-Fe 1Àx Si phase (0 x 0.5) has been proposed as that paramagnetic compound.…”

Section: B Compositional Study By Cemsmentioning

confidence: 99%

Iron silicide formation at different layers of (Fe/Si)3 multilayered structures determined by conversion electron Mössbauer spectroscopy

Badía-Romano

Rubín

Magén

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

The morphology and the quantitative composition of the Fe-Si interface layer forming at each Fe layer of a (Fe/Si)3 multilayer have been determined by means of conversion electron Mössbauer spectroscopy (CEMS) and high-resolution transmission electron microscopy (HRTEM). For the CEMS measurements, each layer was selected by depositing the Mössbauer active 57Fe isotope with 95% enrichment. Samples with Fe layers of nominal thickness dFe = 2.6 nm and Si spacers of dSi = 1.5 nm were prepared by thermal evaporation onto a GaAs(001) substrate with an intermediate Ag(001) buffer layer. HRTEM images showed that Si layers grow amorphous and the epitaxial growth of the Fe is good only for the first deposited layer. The CEMS spectra show that at all Fe/Si and Si/Fe interfaces a paramagnetic c-Fe1−xSi phase is formed, which contains 16% of the nominal Fe deposited in the Fe layer. The bottom Fe layer, which is in contact with the Ag buffer, also contains α-Fe and an Fe1−xSix alloy that cannot be attributed to a single phase. In contrast, the other two layers only comprise an Fe1−xSix alloy with a Si concentration of ≃0.15, but no α-Fe.

show abstract

“…For example, antiferromagnetic coupling of Fe layers separated by semiconducting Si has been claimed [24,25,26]. Ferromagnetic coupling between a ferromagnetic metal and ferromagnetic semiconductor may also be possible in spite of the impedance mismatch between the conduction electrons in the two materials.…”

Section: The Ruderman-kittel-kasuya-yosida (Rkky) Interactionmentioning

confidence: 99%

Neutron scattering studies of nanomagnetism and artificially structured materials

Fitzsimmons

Bader

Borchers

et al. 2004

Journal of Magnetism and Magnetic Materials

157

View full text Add to dashboard Cite

Magnetic decoupling in sputtered Fe/Si superlattices and multilayers

Abstract: }_ .ub_t_ mu_ript _ b=n,u_omdby, ] No.W.31-109-ENG-38. Accccdingly, theU.S. ]Co_.nffinm_U_, nortxc;_, toyaty-_ ] licemeto publ/sh ogreprod_oe thepublished formof [ tl_ eontdbut/on, ofallowothen todoso, for U.S. [ Govenm_nt purposes.

Cited by 71 publications

References 20 publications

Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

Iron silicide formation at different layers of (Fe/Si)3 multilayered structures determined by conversion electron Mössbauer spectroscopy

Neutron scattering studies of nanomagnetism and artificially structured materials

Contact Info

Product

Resources

About

Magnetic decoupling in sputtered Fe/Si superlattices and multilayers

Abstract: }_ .ub_t_ mu_ript _ b=n,u_omdby, ] No.W.31-109-ENG-38. Accccdingly, theU.S. ]Co_.nffinm_U_, nortxc;_, toyaty-_ ] licemeto publ/sh ogreprod_oe thepublished formof [ tl_ eontdbut/on, ofallowothen todoso, for U.S. [ Govenm_nt purposes.

Cited by 71 publications

References 20 publications

Temperature-dependent magnetoresistance effects in Fe3Si/FeSi2/Fe3Si trilayered spin valve junctions

Temperature-dependent magnetoresistance effects in Fe3Si/FeSi2/Fe3Si trilayered spin valve junctions

Iron silicide formation at different layers of (Fe/Si)3 multilayered structures determined by conversion electron Mössbauer spectroscopy

Neutron scattering studies of nanomagnetism and artificially structured materials

Contact Info

Product

Resources

About

Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions