Temperature-dependent magnetoresistance effects in Fe3Si/FeSi2/Fe3Si trilayered spin valve junctions

Ishibashi, Koji; Kobayashi, Kazuki; Nakashima, Kouichi; Asai, Yasufumi; Sakai, Kenichiro; Deguchi, Hiroyuki; Yoshitake, Tsuyoshi

doi:10.7567/jjapcp.5.011501

Cited by 5 publications

(4 citation statements)

References 35 publications

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“…Note that magnetic phase transitions below room temperature were already reported for the thermodynamically stable β-FeGe 2 [56,57] as well as for FeGe 2 nanowires [58]. Furthermore, successful spin valve operation has been achieved also for the trilayer system Fe 3 Si/FeSi 2 /Fe 3 Si with a similar decrease of the device signal below 80 K [59,60].…”

Section: Resultssupporting

confidence: 55%

Electronic and magnetic properties of α−FeGe2 films embedded in vertical spin valve devices

Czubak

Gaucher

Oppermann

et al. 2020

Phys. Rev. Materials

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We studied metastable α-FeGe 2 , a layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic Fe 3 Si and Co 2 FeSi electrodes. For both types of electrodes, spin valve operation is demonstrated with A metallic transport behavior of the α-FeGe 2 spacer layer. The spin valve signals are found to increase with both temperature and spacer thickness, which is discussed in terms of a decreasing magnetic coupling strength between the ferromagnetic bottom and top electrodes. The temperature-dependent resistances of the spin valve structures exhibit characteristic features, which are explained by ferromagnetic phase transitions between 55 and 110 K. The metallic transport characteristics as well as the low-temperature ferromagnetism are found to be consistent with the results of first-principles calculations.

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Section: Resultssupporting

confidence: 55%

Electronic and magnetic properties of α−FeGe2 films embedded in vertical spin valve devices

Czubak

Gaucher

Oppermann

et al. 2020

Phys. Rev. Materials

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show abstract

“…Note that magnetic phase transitions below room temperature were already reported for the thermodynamically stable 𝛽-FeGe 2 [55,56] as well as for FeGe 2 nanowires [57]. Furthermore, successful spin valve operation has been achieved also for the trilayer system Fe 3 Si/FeSi 2 /Fe 3 Si with a similar decrease of the device signal below 80 K [58,59].…”

Section: Resultsmentioning

confidence: 69%

Electronic and magnetic properties of $α$-FeGe$_2$ films embedded in vertical spin valve devices

Czubak,

Gaucher,

Oppermann

et al. 2020

Preprint

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We studied metastable 𝛼-FeGe 2 , a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic Fe 3 Si and Co 2 FeSi electrodes. For both types of electrodes, spin valve operation is demonstrated with a metallic transport behavior of the 𝛼-FeGe 2 spacer layer. The spin valve signals are found to increase both with temperature and spacer thickness, which is discussed in terms of a decreasing magnetic coupling strength between the ferromagnetic bottom and top electrodes. The temperature-dependent resistances of the spin valve structures exhibit characteristic features, which are explained by ferromagnetic phase transitions between 55 and 110 K. The metallic transport characteristics as well as the low-temperature ferromagnetism are found to be consistent with the results of first-principles calculations.

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“…The magnetization curve has clear two steps that indicate the antiparallel alignment formation of magnetizations owing to the difference in the coercive forces between the top Fe and the bottom Fe3Si layers. The polycrystalline Fe layer has a larger coercive force than that of the epitaxial Fe3Si layer [37]. The spin valve behavior is realized, which proves that the UNCD/a-C:H layer act as an interlayer for the spin valve action.…”

Section: Resultsmentioning

confidence: 73%

Film structures of Fe/B-doped carbon/Fe₃Si spin valve junctions

Kobayashi¹,

Nakashima²,

Takeichi³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

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Fe/B-doped carbon/Fe3Si trilayered films were prepared on Si(111) substrates by physical vapor deposition with a mask method, and the film-structures and magnetic properties of the films were investigated. The Fe3Si and Fe layers were deposited by facing targets direct-current sputtering (FTDCS), and the B-doped carbon layers were deposited by coaxial arc plasma deposition (CAPD) with B-blended graphite targets. Here, since the B-doped carbon layers were deposited by CAPD in the same manner as the deposition of B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films, the interlayers should be B-doped UNCD/a-C:H. The formation of a layered structure was confirmed by transmission electron microscopy (TEM). The diffusion of Fe and Si atoms into the interlayer occurs in the range of several nanometers. The shape of the magnetization curve has clear steps that evidently indicate the formation of antiparallel alignment of magnetizations owing to the difference in the coercive forces between the top Fe and bottom Fe3Si layers. It was experimentally demonstrated that B-doped UNCD/a-C:H is applicable to Fe-Si system spin valves as interlayer materials.

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Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

Cited by 5 publications

References 35 publications

Electronic and magnetic properties of α−FeGe2 films embedded in vertical spin valve devices

Electronic and magnetic properties of α−FeGe2 films embedded in vertical spin valve devices

Electronic and magnetic properties of $α$-FeGe$_2$ films embedded in vertical spin valve devices

Film structures of Fe/B-doped carbon/Fe₃Si spin valve junctions

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Temperature-dependent magnetoresistance effects in Fe3Si/FeSi2/Fe3Si trilayered spin valve junctions

Cited by 5 publications

References 35 publications

Electronic and magnetic properties of α−FeGe2 films embedded in vertical spin valve devices

Electronic and magnetic properties of α−FeGe2 films embedded in vertical spin valve devices

Electronic and magnetic properties of $α$-FeGe$_2$ films embedded in vertical spin valve devices

Film structures of Fe/B-doped carbon/Fe3Si spin valve junctions

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Product

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Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

Film structures of Fe/B-doped carbon/Fe₃Si spin valve junctions