Luminescence quantum efficiency and local optical density of states in thin film ruby made by ion implantation

Hensen, T. M.; Dood, M. J. A. de; Polman, A.

doi:10.1063/1.1314322

Cited by 22 publications

(14 citation statements)

References 32 publications

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“…6 In the most simple dielectric environment, a single dielectric interface, the DOS varies with the distance from the interface, which can result in a modification of the spontaneous emission rate for an optical emitter near the interface. 7,8 For an optical emitter near a metal, additional decay processes can occur, such as surface plasmon ͑SP͒ or lossy surface wave excitation that modify the spontaneous emission. [9][10][11][12] In this paper we study the coupling between Si QDs embedded in SiO 2 and a Ag film.…”

Section: Introductionmentioning

confidence: 99%

Excitation of surface plasmons at aSiO2∕Aginterface by silicon quantum dots: Experiment and theory

et al. 2006

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The excitation of surface plasmons ͑SPs͒ by optically excited silicon quantum dots ͑QDs͒ located near a Ag interface is studied both experimentally and theoretically for different QD-interface separations. The Si QDs are formed in the near-surface region of an SiO 2 substrate by Si ion implantation and thermal annealing. Photoluminescence decay-rate distributions, as derived from an inverse Laplace transform of the measured decay trace, are determined for samples with and without a Ag cover layer. For the smallest, investigated Si-QDs-to-interface distance of 44 nm the average decay rate at = 750 nm is enhanced by 80% due to the proximity of the Ag-glass interface, with respect to an air-glass interface. Calculations based on a classical dipole oscillator model show that the observed decay rate enhancement is mainly due to the excitation of surface plasmons that are on the SiO 2 / Ag interface. By comparing the model calculations to the experimental data, it is determined that Si QDs have a very high internal emission quantum efficiency of ͑77± 17͒%. At this distance they can excite surface plasmons at a rate of ͑1.1± 0.2͒ ϫ 10 4 s −1 . From the model it is also predicted that by using thin metal films the excitation of surface plasmons by Si QDs can be further enhanced. Si QDs are found to preferentially excite symmetric thin-film surface plasmons.

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Section: Introductionmentioning

confidence: 99%

Excitation of surface plasmons at aSiO2∕Aginterface by silicon quantum dots: Experiment and theory

et al. 2006

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“…Cr-related luminescence has been identified in sapphire [215] and silicon [222]. The origin of the luminescence in silicon is still under investigation [223].…”

Section: Ultra Bright Single Photon Sources In Bulk Diamondmentioning

confidence: 99%

“…This was confirmed by exciting the sapphire with 514 nm excitation laser and the observation of strong luminescence at 693/695 nm (Figure 7.8). This PL doublet is attributed to a substitutional Cr 3+ atom in a sapphire lattice and its electronic levels are well known [215,220].…”

Section: Origin Of the Emittersmentioning

confidence: 99%

“…The atomic structure of the Cr related center in sapphire is attributed to a substitutional center is in the ms range (~3 ms) and the internal quantum efficiency of 50% [215].…”

Section: Ultra Bright Single Photon Sources In Bulk Diamondmentioning

confidence: 99%

“…First, sapphire hosts a high concentration of chromium atoms, which form a very bright luminescent defect, named R1 [215]. The emission of this defect is centered around 700 nm and was used as the first solid state optical laser exactly 50 years ago [216].…”

Section: Ultra Bright Single Photon Sources In Cvd Diamond Crystalsmentioning

confidence: 99%

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Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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Optical and structural characterization of pulsed laser deposited ruby thin films for temperature sensing application

Kumari

Khare

2013

Applied Surface Science

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Luminescence quantum efficiency and local optical density of states in thin film ruby made by ion implantation

Cited by 22 publications

References 32 publications

Excitation of surface plasmons at aSiO2∕Aginterface by silicon quantum dots: Experiment and theory

Excitation of surface plasmons at aSiO2∕Aginterface by silicon quantum dots: Experiment and theory

Novel Single Photon Emitters Based on Color Centers in Diamond

Optical and structural characterization of pulsed laser deposited ruby thin films for temperature sensing application

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