DOI: 10.1103/physrevb.73.075317
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Abstract: The excitation of surface plasmons ͑SPs͒ by optically excited silicon quantum dots ͑QDs͒ located near a Ag interface is studied both experimentally and theoretically for different QD-interface separations. The Si QDs are formed in the near-surface region of an SiO 2 substrate by Si ion implantation and thermal annealing. Photoluminescence decay-rate distributions, as derived from an inverse Laplace transform of the measured decay trace, are determined for samples with and without a Ag cover layer. For the sma…

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