Luminescence properties of terbium-doped SiCN thin films by rf magnetron reactive sputtering

Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

“…Deposition rate (nm/min) 8 that, from target to substrate, the ejected species collide and/or react with N 2 leading to the modification of the mean free path. Thus, some species do not have enough energy to reach the substrate.…”

“…Some works in the literature reached a step forward by fabricating various devices based on this matrix [4][5][6][7]. Some investigations have also been carried out on Tb 3+ : SiC(N) materials [8][9][10] as well as on the silicon rich silicon oxide films (Tb 3+ :SRSO) [11] with CMOS devices [12]. However, the incorporation of silicon excess in SRSO, contributing to the formation of Si nanoclusters, significantly reduced the emission intensity of lanthanide ions as a result of a strong non-radiative recombination [13][14][15].…”

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

“…In particular, SiN x C y films were grown with a tunable bandgap in the range of 2.3eV to 5.0eV, depending on their C and N content. 48,49 However, in most cases, the incorporation of other elements, particularly hydrogen, is not accounted for. It is more proper to designate amorphous hydrogenated silicon nitride as a-SiN x :H. Not only does the amount of hydrogen incorporation affect physical, optical, and dielectric properties (in accordance with the Lorentz-Lorenz relationship) 50 in what is commonly referred to as SiN x :H, the nature of the Si-H versus N-H bonding also plays a significant role in tailoring the resulting film characteristics.…”

“…It is more proper to designate amorphous hydrogenated silicon nitride as a-SiN x :H. Not only does the amount of hydrogen incorporation affect physical, optical, and dielectric properties (in accordance with the Lorentz-Lorenz relationship) 50 in what is commonly referred to as SiN x :H, the nature of the Si-H versus N-H bonding also plays a significant role in tailoring the resulting film characteristics. [46][47][48][49] Another influencing factor is the Pauling relative electronegativity of the Si, N, and H elements (namely, Si:1.90; N:3.04; H:2.20). Si-N and N-H bonds have relatively high dipole moments, while Si-H bonds have relatively low dipole moments.…”

Microstructural and photoluminescent properties of terbium-doped SiC nanotubes prepared by sputtering using electrospun polymer templates

“…5. The 500 1C annealed samples exhibit a blue-green broad band overlapping the whole [8,14,26], and the low 456-nm PL peak can be attributed to a-SiC in the sputtered films [27]. Four characteristic PL peaks of Tb 3 þ ions are located at $ 493, 549, 592, and 617 nm, which correspond to their intra-4f 5 D 4 -7 F 6 , 5 D 4 -7 F 5 , 5 D 4 -7 F 4 , and 5 D 4 -7 F 3 transitions, respectively [17,28].…”