Luminescence of pure and doped ZnO films synthesised by thermal annealing on GaSb single crystals

Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

“…ZnO films were previously obtained by using the simple route of the Zn metal oxidation at atmospheric pressure [34]. In those cases, the substrates used were GaSb, and we did not observe ZnO NWs.…”

“…The fact that ZnO NWs were not formed on GaSb substrates under the same growth conditions [34] seems to claim for the influence of the CdTe substrate, and thus on the role of Cd or Te elements, on the formation of the NWs. The migration of Cd and Te from the substrate is postulated to happen during the oxidation step, since during the deposition of the Zn metal film the substrate does not increase its temperature (see Fig.…”

“…Different deposition times, ranging from 3 to 5 min, were used. Profilometry measurements of the Zn film thickness gave values ranging from 15 to 30 m. (ii) A further oxidation step was performed in air at 500 • C. More details of the preparation technique can be found elsewhere [34,36,37].…”

“…In fact, we have observed the formation of ZnO NWs in the case of using CdTe substrates. On the other hand, other substrates with the same zinc-blende structure previously used such as GaSb, did not lead to the growth of ZnO NWs, even when using similar growth conditions [34]. In this work we describe a detailed structural and compositional analysis of the parameters affecting the growth of ZnO NWs on CdTe substrates, a potential candidate for photovoltaic applications [35].…”

Influence of oxygen partial pressure on electrical and optical properties of Zn0.93Mn0.07O thin films

“…On the other hand, ZnO has a band-gap energy in the ultraviolet region (3.37 eV at room temperature) and large exciton binding energy (60 meV) and can be made highly conductive by appropriate doping. Thus its application in optoelectronic devices has been attracted considerably by material scientists [4]. Initially, Dietl et al [5] have predicted that ZnO would exhibit ferromagnetism at room temperature after doping with 5% Mn ions.…”