O. Martínez, J.L. Plaza, J. Mass, B. Capote, E. Diéguez, J. Jiménez
ZnO films were grown onto GaSb substrates by metallic Zn thermal evaporation and subsequent oxidation by annealing in atmospheric conditions. The evaporation times ranged from 20 to 80 s. The oxidation process was carried out at temperatures close to 410 • C although other temperatures were also checked. In addition to pure ZnO, rare-earth-doped ZnO films have also been grown by this technique, Eu and Ho oxides were selected due to their application as red phosphors and upconversion. The luminescence properti…
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