2011
DOI: 10.1016/j.jallcom.2010.11.191
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Influence of oxygen partial pressure on electrical and optical properties of Zn0.93Mn0.07O thin films

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Cited by 23 publications
(9 citation statements)
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References 31 publications
(29 reference statements)
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“…From the figure it is seen that the Cu doped ZnO sample has an optical energy band gap of 3.04 eV that is lower than that of the undoped ZnO (3.28 eV). Similar red shift in energy band gap of transition-metal doped II-VI semiconductors was reported by Diouri et al [29,30] which was attributed to the p-d spin-exchange interactions between the band electrons and the localized d electrons of transition-metal ion substituting the cation. Elilarassi et al [31] observed a red shift in the band gap in Cu doped ZnO nanoparticles synthesized by solid state reaction method.…”
Section: Uv-visible Absorption Spectrumsupporting
confidence: 80%
“…From the figure it is seen that the Cu doped ZnO sample has an optical energy band gap of 3.04 eV that is lower than that of the undoped ZnO (3.28 eV). Similar red shift in energy band gap of transition-metal doped II-VI semiconductors was reported by Diouri et al [29,30] which was attributed to the p-d spin-exchange interactions between the band electrons and the localized d electrons of transition-metal ion substituting the cation. Elilarassi et al [31] observed a red shift in the band gap in Cu doped ZnO nanoparticles synthesized by solid state reaction method.…”
Section: Uv-visible Absorption Spectrumsupporting
confidence: 80%
“…It can be seen that the absorption edge shows a clear red‐shift from 4.03 to 2.93 with the increase of Cu 2+ concentration. This decrease in energy band gap for ZnO:Cu NPs correspond to p‐d spin exchange interactions between the ZnO band electrons and the localized d electrons of doped Cu 2+ and have been observed in different reports . The PL intensity of the trap state emissions of ZnO NPs was quenched with the introduction of Cu impurity to the ZnO lattice, as shown in Figure (b) and a Cu‐related emission due to transition of electrons from trap states (I Zn ) to T 2 acceptor level appeared which showed a clearly red‐shift from 485 to 520 nm.…”
Section: Resultssupporting
confidence: 55%
“…This might be due to the resistance offered by Mn atoms for the growth of ZnO along c-axis at this temperature. 15 Moreover, minimum diffraction peak intensity for ISA-500 with reduced crystallite size points to enhanced concentration of point defects (diffusion of oxygen at the interstitial sites), which reduces crystalline quality. The re-sputtering of neutral oxygen atoms and surface oxidation of the target (due to excess oxygen) are also reported to hinder grain growth causing the reduction in c-axis (002) orientation.…”
Section: Structural Analysismentioning
confidence: 99%