Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions

Feng, Shih Wei; Tu, Li; Chyi, Jen Inn; Wang, Hsiang‐Chen

doi:10.1016/j.tsf.2008.09.032

Cited by 9 publications

(13 citation statements)

References 19 publications

(44 reference statements)

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“…Figures 2 (a)-(d) show the PL measurement results for samples A-D. We excite the sample with a 325 nm laser under 10-290 K. Figure 2 (a) shows a peak at approximately 355-360 nm, which is the peak position of GaN. The high peak intensity and narrow peak profile confirm that our procedure produced high-quality bonded GaN nanorod structures [14][15][16][17]. Figures 2 (b)-(d) show the PL measurements of InGaN/GaN double quantum wells under growth temperatures of 750, 700, and 650 °C.…”

Section: Pl Measurementsmentioning

confidence: 70%

“…This hexagonal structure results from the difference in growth speed among the GaN lattice structures. Lattice structures grow considerably faster in the (0001) direction than in other semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) faces. From Figure 4 (b)-(d), we also observe that InGaN/GaN quantum wells extend outside the nanorods to form a cap structure along the SiO 2 layer.…”

Section: Tem and Hrtem Measurementsmentioning

confidence: 99%

“…Research efforts related to growing GaN on non-polarized sapphire substrates have gained considerable attention in recent years, especially because of the results reported by S. Nakamura and his team [9][10][11]. Other than growth on non-polar a-, m-, and r-planes of three sapphire substrate lattice planes, growth on semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) planes of sapphire substrates have recently been developed. Semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) planes of sapphire substrates have the advantage of less lattice structure mismatches with GaN thin films as well as more moderate quantum well barriers.…”

Section: Introductionmentioning

confidence: 99%

“…Other than growth on non-polar a-, m-, and r-planes of three sapphire substrate lattice planes, growth on semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) planes of sapphire substrates have recently been developed. Semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) planes of sapphire substrates have the advantage of less lattice structure mismatches with GaN thin films as well as more moderate quantum well barriers.…”

Section: Introductionmentioning

confidence: 99%

“…In our study, we grow bonded GaN nanorods with a SiO2 masking hole pattern to reduce threading dislocations (TDs) caused by lattice structure mismatch between the sapphire substrate and GaN to obtain GaN nanorods with better quality [12,13]. We then utilize hexagonal structure behavior (nanorod growth speed on C-axis (0001) direction is much higher than that of semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) face) to obtain GaN nanorods with six semi-polar faces on the top. We then study the optical and material properties of InGaN/GaN quantum wells grown on semi-polar faces.…”

Section: Introductionmentioning

confidence: 99%

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Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Huang

Feng

Weng

et al. 2017

Opt. Mater. Express

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We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO 2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO 2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 μm in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO 2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells' cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod's growth mechanism.

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Section: Pl Measurementsmentioning

confidence: 70%