Light emission from several-atom In–N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells

Shi, Junjie; Zhang, Shuai; Yang, Mao; Zhu, Shangguo; Zhang, Min

doi:10.1016/j.actamat.2011.01.016

Cited by 14 publications

(10 citation statements)

References 83 publications

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“…For the In 0.12 Ga 0.88 N compound the E c -E u energy difference is 1.891 (GAMESS) or 1.242 eV (MOPAC), and r c = 4.51 Å. These values are close to E c -E u = 1.04 eV obtained theoretically for the In 0.17 Ga 0.83 N compound using first-principles calculations [8]. This conclusion is also supported by the fact that the indium clusterization phenomenon was not revealed experimentally for In x Ga 1-x N compounds with x < 0.3 [6] and for In 0.22 Ga 0.78 N [4,5] using the electron microscopy with the electron energy less than 0.4 MeV.…”

Section: Indium Atom Spatial Distributionsupporting

confidence: 78%

“…The peculiarities of the indium spatial distribution in InGaAs and InGaN compounds were investigated experimentally [3][4][5][6][7]. The theoretical study of possible spatial distribution types of the indium atoms in InGaN was carried out only for the defect-free crystal [8,9]. Indium atom spatial redistribution in the presence of InGaAs and/or InGaN crystal lattice point defects was not considered in detail.…”

Section: Introductionmentioning

confidence: 99%

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Influence of vacancies on indium atom distribution in InGaAs and InGaN compounds

Bezyazychnaya¹,

Kabanau²,

Kabanov³

et al. 2015

Lith. J. Phys.

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It has been theoretically ascertained that for defect-free InGaAs and InGaN compounds the uniform distribution of indium atoms is more energetically preferable than the clustering distribution. The presence of gallium and arsenic vacancy in InGaAs and nitrogen vacancy in InGaN facilitates indium atom clustering distribution. It has been shown that the increase in the indium content in InGaAs and InGaN compounds leads to the decrease of the formation energy of gallium, arsenic and nitrogen vacancies.

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Section: Indium Atom Spatial Distributionsupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Influence of vacancies on indium atom distribution in InGaAs and InGaN compounds

Bezyazychnaya¹,

Kabanau²,

Kabanov³

et al. 2015

Lith. J. Phys.

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show abstract

“…29 And even with the random distribution of indium atoms or several-atom In-N clusters, it is shown to cause the potential fluctuations in the valence band ranging from 0.055 to 0.11 eV which can localize holes. 29,30 It should be noted that the other microstructural origins such as well thickness fluctuations, network microstructures on the tens of nanometer scale and V-shaped defects can be the additional or marginal candidates responsible for the Stokes-like shift. 32 In the PC spectra, the transitions between different quantum levels can be distinguished as shown by the arrows in the figure.…”

Section: A Stokes-like Shiftmentioning

confidence: 99%

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

Zhang

Ikeda

Zhou

et al. 2015

Journal of Applied Physics

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Articles you may be interested inStrain reduction and crystal improvement of an InGaN/GaN quantum-well light-emitting diode on patterned Si (110) substrate Appl.Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes Appl.Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells. V C 2015 AIP Publishing LLC. [http://dx.

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“…The reported values of the bowing parameter (BP) and band offset ratio (BOR) vary widely [11,12]. The PL of as-grown and annealed InXGa1-XN/GaN nanostructures is subject to change due to the variation of these fundamental parameters.…”

Section: Introductionmentioning

confidence: 98%

A comparative analysis of the photoluminescence spectra of annealed ultrasmall In-rich InGaN/GaN quantum dots and wells

Kumar

Sen²,

Das

2016

Optik

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Light emission from several-atom In–N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells

Cited by 14 publications

References 83 publications

Influence of vacancies on indium atom distribution in InGaAs and InGaN compounds

Influence of vacancies on indium atom distribution in InGaAs and InGaN compounds

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

A comparative analysis of the photoluminescence spectra of annealed ultrasmall In-rich InGaN/GaN quantum dots and wells

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