Luminescence and Conductivity of β-Ga2O3 and β-Ga2O3:Mg Single Crystals

Vasyltsiv, V.; Kostyk, L.; Tsvetkova, O.; Lys, R. M.; Kushlyk, M.; Pavlyk, B.; Luchechko, A.

doi:10.12693/aphyspola.141.312

Cited by 8 publications

(6 citation statements)

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“…The luminescence spectra of polycrystalline samples of β-(Ga 0.8 In 0.2 ) 2 O 3 (shown in Figure 3 ) resemble the luminescence of pure gallium oxide reported elsewhere [ 34 , 35 , 36 , 37 , 38 , 39 ]. Doping with divalent Mg 2+ metals did not lead to significant changes in the form of the luminescence spectrum.…”

Section: Discussionsupporting

confidence: 76%

“…The luminescence of β-(Ga 0.8 In 0.2 ) 2 O 3 solid solutions can be explained using the models of luminescence centers proposed previously for gallium oxide [ 34 , 35 , 36 , 37 , 38 , 39 ]. In particular, the violet, blue, and green luminescence occurs due to the radiative recombination of carriers through DAP (donor–acceptor pairs).…”

Section: Discussionmentioning

confidence: 99%

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Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Luchechko,

Vasyltsiv,

Kushlyk

et al. 2024

Materials

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Undoped and Mg2+-doped β-Ga2O3-20% In2O3 solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the influence of native defects on structural, luminescent, and electrical properties. The synthesis process involved varying the oxygen partial pressure by synthesizing samples in either an oxygen or argon atmosphere. X-ray diffraction (XRD) analysis confirmed the monoclinic structure of the samples with the lattice parameters and unit cell volume fitting well to the general trends of the (Ga1−xInx)2O3 solid solution series. Broad emission spectra ranging from 1.5 to 3.5 eV were registered for all samples. Luminescence spectra showed violet, blue, and green emission elementary bands. The luminescence intensity was found to vary depending on the synthesis atmosphere. An argon synthesis atmosphere leads to increasing violet luminescence and decreasing green luminescence. Intense bands at about 4.5 and 5.0 eV and a low-intensity band at 3.3 eV are presented in the excitation spectra. The electrical conductivity of the samples was also determined depending on the synthesis atmosphere. The high-resistance samples obtained in an oxygen atmosphere exhibited activation energy of around 0.98 eV. Samples synthesized in an argon atmosphere demonstrated several orders of magnitude higher conductivity with an activation energy of 0.15 eV. The results suggest that the synthesis atmosphere is crucial in determining the luminescent and electrical properties of undoped β-Ga2O3-In2O3 solid solution samples, offering the potential for various optoelectronic applications.

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Section: Discussionsupporting

confidence: 76%

Section: Discussionmentioning

confidence: 99%

Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Luchechko,

Vasyltsiv,

Kushlyk

et al. 2024

Materials

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“…defects [53]. The UV luminescence band is not related to the preparation method of β-Ga2O3 and the type of impurities.…”

Section: Properties Of β-Ga2o3mentioning

confidence: 93%

Preparation of Ga2O3 Thin Films by Sol-Gel Method—a Concise Review

Zhang¹,

Spiridonov²,

Panov³

et al. 2023

Rev. Adv. Mater. Technol.

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Nowadays, gallium oxide (Ga2O3) as a wide bandgap semiconductor material is acquiring more and more attention in various practical areas. As a result, there has been a lot of efforts to fabricate and study bulk Ga2O3 material, Ga2O3 thin films, and Ga2O3 nanowires. For Ga2O3 films, there exists a variety of preparation methods such as metal-organic chemical vapor deposition, hydride vapor phase epitaxy, pulsed laser deposition, molecular beam epitaxy, frequency magnetron sputtering, atomic layer deposition, wet chemistry, and sol-gel. This concise review focuses on the preparation of Ga2O3 thin films by sol-gel methods. Sol-gel methods include dip-coating, spin-coating, spray pyrolysis, and drop casting technique. The details on the fabrication of β-Ga2O3 thin films by sol-gel method are summarized and prospected. Polymorphism, structure and properties of sol-gel prepared Ga2O3 films are discussed.

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“…3 The performance of β-Ga 2 O 3 crystals can also be tuned by different dopants, such as Sn and Si to increase the carrier concentration in the crystal, Fe and Mg to obtain an insulating substrate, and Ti, to obtain the laser output. [4][5][6][7] These good qualities allow β-Ga 2 O 3 crystals to be used in semiconductor lasers, 8 high-temperature gas sensors, 9 deep UV detectors, 10 scintillation detectors, 11 field effect transistors, 12,13 Schottky barrier diodes, [14][15][16] and transparent conductive electrodes. 17 β-Ga 2 O 3 crystals can be grown by melt methods, such as the floating zone (FZ), [18][19][20] Czochralski (CZ), [21][22][23][24] vertical Bridgman (VB), [25][26][27] and edge-defined film-fed growth (EFG) methods.…”

Section: Introductionmentioning

confidence: 99%

The origin of twins in the growth of the (100) plane of a β-Ga₂O₃ crystal using EFG

Jian

Sai

et al. 2023

CrystEngComm

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Luminescence and Conductivity of β-Ga₂O₃ and β-Ga₂O₃:Mg Single Crystals

Cited by 8 publications

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Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Preparation of Ga2O3 Thin Films by Sol-Gel Method—a Concise Review

The origin of twins in the growth of the (100) plane of a β-Ga₂O₃ crystal using EFG

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Luminescence and Conductivity of β-Ga2O3 and β-Ga2O3:Mg Single Crystals

Cited by 8 publications

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Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Preparation of Ga2O3 Thin Films by Sol-Gel Method—a Concise Review

The origin of twins in the growth of the (100) plane of a β-Ga2O3 crystal using EFG

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Product

Resources

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Luminescence and Conductivity of β-Ga₂O₃ and β-Ga₂O₃:Mg Single Crystals

The origin of twins in the growth of the (100) plane of a β-Ga₂O₃ crystal using EFG