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Thermally stimulated luminescence (TSL) of β-Ga2O3 single crystals doped with Cr3+ and Mg2+ impurities was investigated. Based on the correlation between the Cr3+ concentration and light sum accumulated in the thermoluminescence (TL) glow peak at 285 K, it was concluded that doping of β-Ga2O3 with Cr3+ ions leads to the formation of electron traps manifested in this peak. The activation energy of peak at 285 K is equal to Ec-0.55 eV and close to E1. Thus the Cr3+e− centers can be a candidate for E1. The high-temperature TL glow peak at 385 K (Ec-0.94 eV) is related to oxygen vacancies which are created in gallium oxide doped by Mg2+ ions to compensate for the negative charge formed by the substitution of gallium sites by magnesium ions.The co-doping of β-Ga2O3 crystals with Cr3+ and Mg2+ impurities leads to the appearance of a new TL glow peak at 320 K with an energy close to E*2 (Ec-0.7). It is suggested that this peak is formed by defect complex, in particular, oxygen vacancies with Cr3+ or Fe3+ ions.

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