The origin of twins in the growth of the (100) plane of a β-Ga<sub>2</sub>O<sub>3</sub> crystal using EFG

Bu, Yuzhe; Jian, Wei; Sai, Qinglin; Hu, Qi

doi:10.1039/d3ce00249g

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On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method

Bauman,

Panov,

Spiridonov

et al. 2023

Funct. Mater. Lett.

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Bulk crystals of [Formula: see text]-Ga2O3 were successfully grown by the EFG (Stepanov) method. Analysis of the material using an X-ray diffraction showed the high crystalline quality of the obtained crystals. However, when determining the elemental composition by the Energy Dispersive X-ray Spectroscopy (EDS) method, a deviation of the crystal composition from a stoichiometric one was found and a lack of oxygen was detected. Indirectly, this indicates the non-optimal composition of the atmosphere in the growth zone. The origin of this deviation of the composition can be oxygen vacancies in the bulk of the crystal. However, the absorption spectrum does not contain peaks characteristic for oxygen vacancies in gallium oxide. An analysis of the optical transmission spectra made it possible to estimate the optical bandgap of the grown gallium oxide samples, which was 4.7 eV.

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On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method

Bauman,

Panov,

Spiridonov

et al. 2023

Funct. Mater. Lett.

View full text Add to dashboard Cite

show abstract

The Study of (-101) Plane in Β-Ga2o3 Crystal

Bu,

Yang,

Wei

et al. 2024

Preprint

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The origin of twins in the growth of the (100) plane of a β-Ga₂O₃ crystal using EFG

Abstract: Twins are the common defects in β-Ga2O3 crystals that affect the development of large single crystal substrates. To investigate the generation and development of twins, we grew a (100) oriented...

Cited by 2 publications

References 36 publications

On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method

On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method

The Study of (-101) Plane in Β-Ga2o3 Crystal

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The origin of twins in the growth of the (100) plane of a β-Ga2O3 crystal using EFG

Abstract: Twins are the common defects in β-Ga2O3 crystals that affect the development of large single crystal substrates. To investigate the generation and development of twins, we grew a (100) oriented...

Cited by 2 publications

References 36 publications

On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method

On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method

The Study of (-101) Plane in Β-Ga2o3 Crystal

Contact Info

Product

Resources

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The origin of twins in the growth of the (100) plane of a β-Ga₂O₃ crystal using EFG