&lt;title&gt;Progress in the fabrication of GaN photocathodes&lt;/title&gt;

Ulmer, M. P.; Wessels, Bruce W.; Shahedipour, F.; Korotokov, Roman Yuryevich; Joseph, Charles L.; Nihashi, Tokuaki

doi:10.1117/12.429433

Cited by 14 publications

(7 citation statements)

References 4 publications

(5 reference statements)

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“…al. (2,3). We have developed a plan for transferring the process from sapphire substrates to silicon.…”

Section: High Conductivity Gan Growth On Siliconmentioning

confidence: 99%

“…Nevertheless, due to the large thermal and lattice mismatch between GaN and silicon, it is difficult to grow high quality, low defect density epitaxial films. Recently n-type epitaxial GaN with the wurtzite structure has been grown on (100) Silicon substrates (2,3). To grow epitaxial layers on Si, a thin AlN magnetron sputtered buffer layer is used.…”

Section: High Conductivity Gan Growth On Siliconmentioning

confidence: 99%

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Design and development of high quantum efficiency large area UV focal plane arrays for photon counting applications

et al. 2006

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In this paper we will present innovative design approach for UV Focal Plane Array for Photon Counting Applications. This Focal Plane includes the building a large area silicon micro-channel plate (MCP) using GaN photocathode. In this paper, we will present the design and simulation of silicon micro-channel plate with GaN photocathode with large area array with 2 micron pores and 3 micron pitch. We will also present results for the ICP-RIE process to fabricate 2 micron pores, and Growth of high conductivity GaN photocathodes using MOCVD to produce 40% QE.We will also discuss approaches for development of readout architecture and circuit for Silicon based MCP 4096x4096 UV FPA. The readout architecture scheme uses a series of charge sensitive amplifiers (CSA) to boost the charge received on each anode. The signal from each CSA is then passed into a shaping amplifier (SA) that produces a smooth waveform. The peak of the smoothed waveform is captured by a sample and hold (S/H) circuit that holds the signal until an analog to digital (A/D) converter can sample it. Details of the ROIC circuit will be presented.

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“…al. (2,3). We have developed a plan for transferring the process from sapphire substrates to silicon.…”

Section: High Conductivity Gan Growth On Siliconmentioning

confidence: 99%

Section: High Conductivity Gan Growth On Siliconmentioning

confidence: 99%

Design and development of high quantum efficiency large area UV focal plane arrays for photon counting applications

et al. 2006

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“…With the robust characteristics as rapid spectral response, high quantum efficiency and stable physical and chemical properties, GaN photocathode can be widely used in ultraviolet detection, photon-counting and vacuum electron source area [1][2][3][4][5][6][7]. Recently, comparatively high quantum efficiencies of GaN photocathode have been achieved, including more than 70% QE for reflection mode and about 35% QE for transmission mode by some groups [1,2].…”

Section: Introductionmentioning

confidence: 99%

Reactivation of gallium nitride photocathode with cesium in a high vacuum system

Zhang

2013

Optik

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“…Princeton University has studied the negative electron affinity characteristic and the electron emission at cesiated GaN surfaces [1] . Northwest University studied the fabrication and low light level applications of GaN photocathode [2,3] . University of California studied the development of GaN photocathode for imaging detectors [4,5] .Stanford University has done much work in such aspects as preparation of NEA GaN photocathode and surface mechanism in recent years [6,7] .…”

Section: Introductionmentioning

confidence: 99%

Quantum Yield of Reflection Mode Varied Doping GaN Photocathode

et al. 2016

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Abstract. Using the NEA photocathode activation and evaluation experiment system, the varied doping GaN photocathode has been activated and evaluated. According to the diffusion and orientation drifting equation, the quantum yield formula of reflection mode varied doping NEA GaN photocathode was gotten. The factors affecting the quantum efficiency of varied doping GaN photocathode were studied. For the varied doping GaN photocathode, the quantum efficiency is mainly decided by the escape probability of electron P, he absorption coefficient D, the electron diffuse length L D , the reflectance of cathode materials for incident light R, emission layer thickness Te and the inside electric field E .The experiment and analysis results show: With the directional inside electric field in the bulk, the varied doping NEA GaN photocathode has better photoemission performance than uniform doping photocathode.

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<title>Progress in the fabrication of GaN photocathodes</title>

Cited by 14 publications

References 4 publications

Design and development of high quantum efficiency large area UV focal plane arrays for photon counting applications

Design and development of high quantum efficiency large area UV focal plane arrays for photon counting applications

Reactivation of gallium nitride photocathode with cesium in a high vacuum system

Quantum Yield of Reflection Mode Varied Doping GaN Photocathode

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