Reactivation of gallium nitride photocathode with cesium in a high vacuum system

Fu, Xiaoqian; Zhang, Junju

doi:10.1016/j.ijleo.2013.07.004

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…The excited electrons meet a wider barrier and some electrons, which can escape into the vacuum easily at the beginning, now can not overpass the wider barrier to radiate. More details can be found in a separate paper 15 .…”

Section: Discussionmentioning

confidence: 99%

Decay Characteristic of Gallium Nitride Photocathode in a High Vacuum System

2014

AMM

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The decay characteristics of the originally-activated GaN photocathode are explored by testing the change of quantum efficiency (QE).The QE after degradation for 9 hours can still keep more than 42% of the original value, and after reactivated with cesium, the QEs are almost recovered. The restorations of both the band bending and the ideal Cs/O ratio on the surface, along with the double dipole model are proposed to explain the QE variation of the GaN photocathode. Further exploration should include the roles played by the achievement of the maximum band bending of the GaN surface when deposited with Cs and its relationship with the surface Mg doping concentration.

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Section: Discussionmentioning

confidence: 99%

Decay Characteristic of Gallium Nitride Photocathode in a High Vacuum System

2014

AMM

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“…Compound III-V semiconductors (e.g., GaAs) and alkali antimonides are the most established photocathodes offering high QEs following appropriate surface treatments at the expense of limited lifetimes. With a focus on solar blind photocathodes, there has been limited success in developing wide bandgap III-V semiconductorbased photocathodes utilizing advanced nitride materials (e.g., GaN and AlN) as well as diamond and other exotic materials [118][119][120][121] . In some cases, QEs of well over 20% have been reported for NEA treated GaN-based photocathodes under UV illumination.…”

Section: Advanced Thin Film Semiconductors and Band Gap Engineering Omentioning

confidence: 99%

Perspectives on Designer Photocathodes for X-ray Free-Electron Lasers: Influencing Emission Properties with Heterostructures and Nanoengineered Electronic States

et al. 2018

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The development of photoemission electron sources to specifically address the competing and increasingly stringent requirements of advanced light sources such as X-ray Free Electron Lasers (XFELs) motivates a comprehensive material-centric approach that integrates predictive computational physics models, advanced nano-synthesis methods, and sophisticated surface science characterization with in situ correlated study of photoemission performance and properties. Related efforts in material science are adopting various forms of nanostructure (such as compositionally graded stoichiometry in heterostructured architectures, and quantum features) allowing for tailored electronic structure to control and enhance opto-electronic properties. These methods influence the mechanisms of photoemission (absorption, transport, and emission) but have not, as yet, been systematically considered for use in photocathode applications. Recent results and near-term opportunities are described to exploit controlled functionality of nanomaterials for photoemission. An overview of the requirements and status is also provided.

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Study of GaN/AlGaN photocathode with variable aluminum AlxGa1−xN material in emission layer

et al. 2018

Optik

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Reactivation of gallium nitride photocathode with cesium in a high vacuum system

Cited by 5 publications

References 15 publications

Decay Characteristic of Gallium Nitride Photocathode in a High Vacuum System

Decay Characteristic of Gallium Nitride Photocathode in a High Vacuum System

Perspectives on Designer Photocathodes for X-ray Free-Electron Lasers: Influencing Emission Properties with Heterostructures and Nanoengineered Electronic States

Study of GaN/AlGaN photocathode with variable aluminum AlxGa1−xN material in emission layer

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