&lt;title&gt;Progress in DUV resins&lt;/title&gt;

Przybilla, Klaus Juergen; Roeschert, Heinz; Spieß, W.; Eckes, Charlotte; Chatterjee, Subhankar; Khanna, Dinesh N.; Pawlowski, Georg; Dammel, Ralph R.

doi:10.1117/12.46368

Cited by 13 publications

(9 citation statements)

References 4 publications

(9 reference statements)

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“…1) Introduction of alkyl substituents in to 4-hydroxystyrene [8] 2) copolymerization of 4-acetoxystyrene with other comonomers [9]. Brief summary of the results of these two approaches are as follows: There is also a tremendous effect on the dissolution rate when the position of hydroxyl group is changed.…”

Section: Selection Of the Matrix Resinmentioning

confidence: 99%

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Progress in acetal based deep UV resist.

Padmanaban¹,

Kinoshita²,

Kudo³

et al. 1994

J. Photopol. Sci. Technol.

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Acetal based deep UV resists, AZ® DX series, are high performance, positive tone deep UV resists consisting of poly(3-methyl,4-hydroxystyrene-co-4-hydroxystyrene) matrix resin, poly(N,0-acetal) dissolution inhibitor, bis(arylsulfonyl) diazomethane photoacid generator and a photobase to stabilize the latent acid image. The resist can lineate structures between 0.35 and 0.25 µm using KrF laser (248 nm) source. In the present paper, the background for the selection of current components and the function of the photobase is presented. Finally, the lithographic properties of the acetal based resist, AZ® DX 46 is presented, demonstrating the usefulness of the resist for 64 and 256 Mbit DRAM manufacturing.

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Section: Selection Of the Matrix Resinmentioning

confidence: 99%

“…For instance, poly(3-hydroxystyrene) has a dissolution rate of 6,000 nmlmin and poly(2-hydroxystyrene) has near zero dissolution rate per min. The reason for this difference has been described based on the ease of intramolecular interactions in case of poly(2-hydroxystyrene) [8].…”

Section: Selection Of the Matrix Resinmentioning

confidence: 99%

Progress in acetal based deep UV resist.

Padmanaban¹,

Kinoshita²,

Kudo³

et al. 1994

J. Photopol. Sci. Technol.

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“…However, in order to meet the requirement for finer patterning and higher circuit density, the use of shorter wavelength deep-UV (DUV, <300 nm) is required. Novolac, which has been widely used as a binder resin of NUV and MUV resist systems, cannot be used at such short wavelengths because novolac absorbs most of the light near the resist surface with little photoinduced reaction in the resist layer (Gipstein et al, 1982;Pryzybilla et al, 1991;Funhoff et al, 1992). On the other hand, PPVP exhibits good transparency at 248 nm (KrF excimer laser).…”

Section: Introductionmentioning

confidence: 99%

Hydrogenated Poly(p-vinylphenol) for Microlithography

Matsumoto¹,

Akaho²,

Noguchi³

et al. 1996

Ind. Eng. Chem. Res.

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The characterization of partially hydrogenated poly(p-vinylphenol)s was carried out. By hydrogenation, oxidized sites of the polymers such as quinoid were reduced and the phenolic moiety was converted to cyclohexanolic structure. Accompanied with the structural changes, light transmittance was improved in a wide range of wavelength from visible to the deep-UV region. As the degree of hydrogenation increased, the alkali dissolution rate decreased, while the polymers showed very constant glass transition temperatures and etch durabilities to CF 4 / O 2 plasma. These properties of hydrogenated poly(p-vinylphenol)s are considered to be suitable for a variety of photosensitive applications, especially photoresist materials for microlithography under deep-UV exposure.

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“…1,1992 polymers. As the matrix resin is the main ingredient in resist formulations, PHS containing resists might remain costly alternatives to conventional i-line materials, as long as no alternative ways of manufacturing are found [5].…”

Section: Introductionmentioning

confidence: 99%

Hexafluoroacetone in deep UV resist chemistry: new resins, dissolution inhibitors and crosslinkers.

Przybilla

Röschert

Pawlowski

1992

J. Photopol. Sci. Technol.

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Some recent investigations on hexafluoroacetone (HFA) have revealed that this reagent offers a variety of interesting aspects and potential applications for new photoresist products. The 2-hydroxyhexafluoroisopropyl group (HHFIP), obtained via condensation reaction of HFA with aromatic compounds, exhibits properties comparable to phenolic groups with respect to reactivity and acidity. This allows transfer of a variety of chemistries presently exclusively linked to phenol-type compounds, such as reversible blocking, to HHFIP substituted compounds, resulting in alkali-soluble matrix resins, polymer functional group deprotection materials, or dissolution inhibition, and crosslinking type materials. In contrast to phenols, the electron density of the aryl group is reduced due to the electron-withdrawing properties of the HHFIP group, resulting in materials with significantly changed reactivities of the aromatic moieties.

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<title>Progress in DUV resins</title>

Cited by 13 publications

References 4 publications

Progress in acetal based deep UV resist.

Progress in acetal based deep UV resist.

Hydrogenated Poly(p-vinylphenol) for Microlithography

Hexafluoroacetone in deep UV resist chemistry: new resins, dissolution inhibitors and crosslinkers.

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