Progress in acetal based deep UV resist.

Abstract

Acetal based deep UV resists, AZ® DX series, are high performance, positive tone deep UV resists consisting of poly(3-methyl,4-hydroxystyrene-co-4-hydroxystyrene) matrix resin, poly(N,0-acetal) dissolution inhibitor, bis(arylsulfonyl) diazomethane photoacid generator and a photobase to stabilize the latent acid image. The resist can lineate structures between 0.35 and 0.25 µm using KrF laser (248 nm) source. In the present paper, the background for the selection of current components and the function of the photobase is presented. Finally, the lithographic properties of the acetal based resist, AZ® DX 46 is presented, demonstrating the usefulness of the resist for 64 and 256 Mbit DRAM manufacturing.

Improvement of post-exposure delay stability of chemically amplified positive resist

“…CA resists employ acid catalytic reaction, so the adsorption of contaminants at the resist film surface may affect the resist performances. In order to improve PED and PCD stability, the addition of some compounds to resist solution is a well-known method [15] . We tried to add an ion-dissociative compound to resist solution.…”