We have been developing novolak-based chemically amplified positive resists for the next generation photomask fabrication. In this paper, we report two different types of EB resists : RE-5 150P and RE-5 160P. Our resist materials consist offour components : a novolak matrix resin, a polyphenol compound, an acid generator and a dissolution inhibitor.We applied two different types of dissolution inhibitors to our resist materials. RE-5150P and RE-5160P employed respective a high and a low activation energy type of a dissolution inhibitor. RE-5150P has high contrast and RE-5160P has wide process window. As a result, we confirmed RE-5150P could achieve 0.24 ji m line-and-space vertical resist pattern profiles at 8 i C/cm2 using the 50kV EB-wnter HL-800M, and RE-5 160P has wide process window : post exposure delay stability is over 24hrs. and post coating delay stability is over 3Odays.
We have investigated acid-breakable (AB) resins for chemical-amplification positive resists. The The AB resin did not dissolve in an aqueous base developer (TMAH: 2.38%), and it had a good margin for the polyphenol/vinylether feed ratio. Even for AB resins, with large differences in molecular weight, the AB-resin-based resist exhibited almost the same exposure characteristics. We also examined the relationship between the inhomogeneous distribution of the acid generator and the film structure of the AB-resin-based resist.
We have been developing a novolak-based chemically amplified positive resist for next generation photomask (below 0. l8um) fabrication. This resist prevents footing profile by use of a hydrophilic polyphenol compound. We succeeded in improving PED and PCD stability by addition of an ion-dissociative compound. We obtained vertical resist profiles on a chromiumoxide (CrOx) substrate. With the resist, we could make a well defined O.25um line-and-space patterns on a CrOx substrate at a dose of 4.OuC/cm2. Under the ambient air (amines concentration : 4ppb, humidity : 45%), the line width change was less than lOrim when the delay time between EB exposure and post-exposure-baking was from 0 to 8 hours. Under the same condition, the line width change was less than 2Onm even when the post-coating delay (PCD) time was 7 days.
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