1996
DOI: 10.1117/12.250694
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<title>Micromachined VO<formula><inf><roman>2</roman></inf></formula>-based uncooled IR bolometric detector arrays with integrated CMOS readout electronics</title>

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Cited by 19 publications
(11 citation statements)
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“…To improve the sensitivity performance, there are efforts to implement microbolometers using various materials, such as vanadium oxide (VO x ) [5][6][7] , amorphous silicon (a-Si) [8][9][10] , polycrystalline silicon-germanium (poly SiGe) 11,12 , yttrium barium copper oxide (YBaCuO) 13,14 , and metal films 15,26 . A high performance, very close to those of cooled infrared detectors, has been demonstrated with this approach, resulting in focal plane array (FPA) sizes as large as 640 × 480 and pixel sizes ranging from 50 µm down to 17 µm, especially using VOx and a-Si at much lower cost [5][6][7][8][9][10] . Another approach for highly sensitive micorbolometer is the use of silicon p-n junction diodes as the temperature sensitive element instead of resistive microbolometers in the detector arrays [27][28][29] .…”
Section: International Scenario and Recent Developmentsmentioning
confidence: 99%
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“…To improve the sensitivity performance, there are efforts to implement microbolometers using various materials, such as vanadium oxide (VO x ) [5][6][7] , amorphous silicon (a-Si) [8][9][10] , polycrystalline silicon-germanium (poly SiGe) 11,12 , yttrium barium copper oxide (YBaCuO) 13,14 , and metal films 15,26 . A high performance, very close to those of cooled infrared detectors, has been demonstrated with this approach, resulting in focal plane array (FPA) sizes as large as 640 × 480 and pixel sizes ranging from 50 µm down to 17 µm, especially using VOx and a-Si at much lower cost [5][6][7][8][9][10] . Another approach for highly sensitive micorbolometer is the use of silicon p-n junction diodes as the temperature sensitive element instead of resistive microbolometers in the detector arrays [27][28][29] .…”
Section: International Scenario and Recent Developmentsmentioning
confidence: 99%
“…The compatibility of the detectors with CMOS technology, to achieve this integration, is one of the main concerns for the development of lowcost detectors. Implementation of microbolometers on surface micromachined, bridges on CMOS-processed wafers is one of the most common approaches for uncooled IR imaging [5][6][7][8][9][10][11][12] . The bolometers are fabricated on these thermallyisolated and suspended bridges, as shown in Fig.…”
Section: International Scenario and Recent Developmentsmentioning
confidence: 99%
“…2 [7,8]. The microbolometer consists of a 0.5 μm thick micro-bridge of Si 3 N 4 suspended above the underlying silicon substrate, two narrow legs of Si 3 N 4 which are 2.5 μm high and supporting the bridge, and a 50×50 μm thin film (500 Å) of VO 2 which is encapsulated in the center of the micro-bridge.…”
Section: The Imperfection Of Conventional Bias Methodsmentioning
confidence: 99%
“…In order to improve the sensitivity of microbolometer, a standard micro-bridge structure which is widely utilized in microbolometric focal plane arrays is used for microbolometer pixel [6,7]. The micro-bridge structure of VO x bolometer is illustrated in Fig.…”
Section: Fabrication Of Linear Microbolometric Arraymentioning
confidence: 99%