2009
DOI: 10.1007/s10762-009-9574-7
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A New Bias Method for Microbolometer Array

Abstract: In this paper, we describe the effect on the performance of focal plane arrays (FPAs) acted by the non-uniformity of microbolometer array resistance under conventional bias methods, put forward a new bias method for the first time, which provides a unique bias to each of microbolometer array detector elements and can be called constant power bias method, deduce the theoretically algorithmic base of this bias method, and verify its advantages. Theoretical analysis and experimentally measuring results indicate t… Show more

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“…We have previously reported VO x thin films deposited by reactive ion-beam sputtering and post-annealing process [9,10]. However, the post-annealing process temperature of 400-500°C is too high for integration with CMOS circuit.…”
Section: Introductionmentioning
confidence: 99%
“…We have previously reported VO x thin films deposited by reactive ion-beam sputtering and post-annealing process [9,10]. However, the post-annealing process temperature of 400-500°C is too high for integration with CMOS circuit.…”
Section: Introductionmentioning
confidence: 99%