Linear Microbolometric Array Based on VOx Thin Film

Abstract

In this paper, a linear microbolometric array based on VO x thin film is proposed. The linear microbolometric array is fabricated by using micromachining technology, and its thermo-sensitive VO x thin film has excellent infrared response spectrum and TCR characteristics. Integrated with CMOS circuit, an experimentally prototypical monolithic linear microbolometric array is designed and fabricated. The testing results of the experimental linear array show that the responsivity of linear array can approach 18KV/W and is potential for infrared image systems.

2D materials-based photodetectors combined with ferroelectrics

“…the bolometric effect. Taking a VO x -based detector as an example, when VO x absorbs thermal radiation at room temperature, it causes a significant decrease in resistance and an increase in device current, thereby achieving incident light detection [48]. The photothermoelectric effect (PTE), also known as the Seebeck effect, is based on photothermal conversion and thermoelectric conversion.…”

Resistance hysteresis loop characteristic analysis of VO2 thin film for high sensitive microbolometer

“…Thin films of vanadium dioxide (VO 2 ) have been selected to fabricate microbolometer arrays mainly because of their excellent temperature coefficient of resistance (TCR) normally about -2% [1][2][3], and all current microbolometers for infrared detection based on VO 2 thin films work in the semiconductor state of these films at near room temperature. Although the present TCR of typical VO 2 thin film is adequate for a lot of infrared sensing applications, there are still strong demands for high-temperature-resolution infrared image system.…”

A Novel Subwavelength Microbolometer for Terahertz Sensing

“…Such sensors should be compact, require little operational power, and be reproducible on a large scale. Microbolometers have been used extensively in recent years for several reasons: their typical noise equivalent power (NEP) levels of <20 nW/√Hz result in extreme sensitivity 4,5,6,7 ; typical sensor areas of tens of microns square are easily inserted into many physical systems 4,5,7,8 ; the sensors themselves can often be manufactured using micro-machining technology 6,8 ; they require very little power 4,8 during operation allowing for mobile applications. During sensing, the electromagnetic energy being detected must eventually be coupled into a small sensing volume.…”