Resistance hysteresis loop characteristic analysis of VO2 thin film for high sensitive microbolometer

Chen, Xiqu; Lv, Qiang

doi:10.1016/j.ijleo.2015.06.076

Cited by 8 publications

(5 citation statements)

References 14 publications

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“…More importantly, VTRO-3 with low resistivity has large TCR (3.47%/°C), similar to undoped VO 2 thin film (VO). It is reasonable since semiconductor VO 2 with monoclinic structure generally exhibits large TCR [44]. As revealed by XRD, Raman, and TEM analyses, V 1-x-y Ti x Ru y O 2 thin films have same monoclinic structure as undoped VO 2 .…”

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 79%

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A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

et al. 2020

Nanoscale Res Lett

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Preparing the thermal-sensitive thin films with high temperature coefficient of resistance (TCR) and low resistivity by a highly compatible process is favorable for increasing the sensitivity of microbolometers with small pixels. Here, we report an effective and process-compatible approach for preparing V 1-x-y Ti x Ru y O 2 thermal-sensitive thin films with monoclinic structure, high TCR, and low resistivity through a reactive sputtering process followed by annealing in oxygen atmosphere at 400°C. X-ray photoelectron spectroscopy demonstrates that Ti 4+ and Ru 4+ ions are combined into VO 2. X-ray diffraction, Raman spectroscopy, and transmission electron microscopy reveal that V 1-x-y Ti x Ru y O 2 thin films have a monoclinic lattice structure as undoped VO 2. But V 1-x-y Ti x Ru y O 2 thin films exhibit no-SMT feature from room temperature (RT) to 106°C due to the pinning effect of high-concentration Ti in monoclinic lattice. Moreover, RT resistivity of the V 0.8163 Ti 0.165 Ru 0.0187 O 2 thin film is only one-eighth of undoped VO 2 thin film, and its TCR is as high as 3.47%/°C.

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Section: High-concentration Ti Was Introduced Intomentioning

confidence: 79%

“…However, VO x thermal-sensitive thin films, which are generally prepared at relatively low temperature (lower than 300°C), are amorphous [3,7,8]. Whereas amorphous VO x tends to crystallize at elevated temperature [9]. Once the crystallization happens, electrical parameters of the film will be significantly changed.…”

Section: Introductionmentioning

confidence: 99%

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

et al. 2020

Nanoscale Res Lett

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“…Experimental VO 2 -based bolometers 66 – 69 have reported the operation by exploiting the semiconductor phase of VO 2 , i.e., at room temperature or normal temperatures well below the phase change (where TCR normal = 2–6% K −1 69 ). The cliff of the transition is not used experimentally, however, there are simulation 65 and modeling works 70 , 71 assuming TCR max upto 171% K −1 65 . Moreover, according to the experimental data of the transition edge bolometer in 66 , operating in the hysteresis region does not lead to any expected higher responsivity, but even half of the one when operated at T C R normal in periodic acquisition mode, due to formation of minor hysteresis loops and the loop accommodation process 66 .…”

Section: Introductionmentioning

confidence: 99%

“…The observed IMT voltage modulation was interpreted as field-induced enhancement of carrier density (Poole–Frenkel effect) succeeded by Joule heating due to electron-lattice coupling, which then stabilizes the metallic phase. For transition edge VO 2 bolometers, the lattice instabilities close to the phase-change temperature along with the local Joule heating can interfere with the bias control, as well as confining the dynamic range of the input 71 , 73 . In the device configuration of our work we are no more confronted by such instabilities and the power range can go broader (over a milli-watt) compared to that of bolometers (up to 20 μW 64 ).…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

et al. 2023

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In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-metal transition threshold voltage to the incident wave. The detection concept is demonstrated through actuation of biased VO2 switches encapsulated in a pair of coupled antennas by interrupting coplanar waveguides for broadband measurements, on silicon substrates. Ultimately, we propose an electromagnetic-wave-sensitive voltage-controlled spike generator based on VO2 switches in an astable spiking circuit. The fabricated sensors show responsivities of around 66.3 MHz.W−1 at 1 μW, with a low noise equivalent power of 5 nW.Hz−0.5 at room temperature, for a footprint of 2.5 × 10−5 mm2. The responsivity in static characterizations is 76 kV.W−1. Based on experimental statistical data measured on robust fabricated devices, we discuss stochastic behavior and noise limits of VO2 -based spiking sensors applicable for wave power sensing in mm-wave and sub-terahertz range.

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“…Experimental VO 2based bolometers [39][40][41][42] have reported the operation by exploiting the semiconductor phase of VO 2 , i.e., at room temperature or normal temperatures well below the phase change (where TCR normal = 2 to 6 %K −142 ). The cliff of the transition is not used experimentally, however, there are simulation 38 and modeling works 43,44 assuming TCR max up to 171 %K −138 . Moreover, according to the experimental data of the transition edge bolometer in 39 , operating in the hysteresis region does not lead to any expected higher responsivity, but even half of the one when operated at TCR normal in periodic acquisition mode, due to formation of minor hysteresis loops and the loop accommodation process 39 .…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in vanadium dioxide

Qaderi

Rosca

Burla³

et al. 2022

Preprint

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We present uncooled millimeter-wave (mm-wave) and sub-terahertz (THz) detection based on the sensitivity of field-induced insulator-to-metal transition (IMT) threshold voltage in Vanadium dioxide (VO2). We exploit the characteristics of reversible IMT in VO2 thin film devices, and demonstrate actuation of biased VO2 two-terminal switches encapsulated in a pair of coupled antennas on a Si/SiO2 substrate. We also study the behavior of VO2 switches interrupting coplanar waveguide (CPW)s for broadband measurement purposes. Finally, we propose an electromagnetic-wave-sensitive voltage-controlled spike generator based on a VO2 switch in an astable circuit. The fabricated sensors show record figures of merit, e.g. responsivities of 66.3 kHz/mW with a low noise equivalent power (NEP) of 20 nW at room temperature, for a footprint of 2.5 × 10-5 mm2. Our solution gives 3 times better responsivity with only 1/10 footprint of the state of the art which can be scaled down to few hundreds of nanometers. The responsivity in static measurements is 76 kV/W in the same circumstances. Our results highlight the capability of VO2 phase transition for building electromagnetic power sensors triggerable by low energy photons. Our experiments prove the concept within mm-wave ranges (40-220 GHz), while frequency scaling near-THz is feasible in similar design.

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Resistance hysteresis loop characteristic analysis of VO2 thin film for high sensitive microbolometer

Cited by 8 publications

References 14 publications

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in vanadium dioxide

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