&lt;title&gt;Improved HgCdTe detectors with novel antireflection coating&lt;/title&gt;

Babu, R. Sachidananda; Hu, Kelley; Manthripragada, Sridhar S.; Martineau, Robert J.; Kotecki, Carl A.; Peters, F. A.; Burgess, Andre S.; Krebs, Danny J.; Mott, D. B.; Ewin, Audrey J.; Miles, Avery I.; Nguyen, Trang L.; Shu, P.

doi:10.1117/12.255155

Cited by 3 publications

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“…As to investigations of noise mechanisms in HgCdTe photodiodes the origin of the 1/f noise still seems to be the most important and unsolved problem. Several sources of the 1/f noise have been proposed in application to these photodiodes [10][11][12][13][14][15]. One of the possible source is lattice defects of different types unintentionally or intentionally introduced during growth of starting material.…”

Section: Introductionmentioning

confidence: 99%

“…As shown in [12], 1/f noise in LWIR photodiodes is a bulk phenomenon associated with defects in the depletion region. However, the states at the interface of HgCdTe and passivating layer can also contribute to 1/f noise [11,13,14]. Finally, the dark current is suspected to be a possible source of 1/f noise, too.…”

Section: Introductionmentioning

confidence: 99%

“…Normalized photoresponse spectra of implanted n + -p photodiodes Hg 1-x Cd x Te (x ≅ 0.22) at 82 K. Measured and calculated current-voltage characteristics of n + -p photodiodes at 77 K. The dots represent measured data and the solid lines represent theory. The fit was obtained for N t = 1.2⋅1013 ; 2⋅10…”

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confidence: 99%

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Noise spectra and dark current investigations in n+-p-type Hg1-xCdxTe (x ~0.22) photodiodes

Ivasiv¹

1999

Semicond. Phys. Quantum Electron. Optoelectron.

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The dark current and noise spectra were investigated in Hg 1-x Cd x Te (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at low reverse biases U≤0.1 V. In the photodiodes, where the tunneling current is found to be dominating, the 1/f noise is observed up to frequencies 10 4 Hz. The decrease of tunneling current results in the decrease of 1/f noise.

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