Noise spectra and dark current investigations in n+-p-type Hg1-xCdxTe (x ~0.22) photodiodes

Abstract

The dark current and noise spectra were investigated in Hg 1-x Cd x Te (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at low reverse biases U≤0.1 V. In the photodiodes, where the tunneling current is found to be dominating, the 1/f noise is observed up to frequencies 10 4 Hz. The decrease of tunneling current results in the decrease of 1/f noise.