<title>Hot carrier photocapacitive effect</title>

Abstract

Semiconductor p-n and metal-insulator-semiconductor structures containing a capacitive element were investigated under pulsed ir laser irradiation. It is shown that the carrier heating in the structures is responsible for the rise of the photosignal. A direct correlation between the photosignal and the capacitance of the structures is confirmed. Possible applications of the effect are discussed.

Peculiarities of High Power Infrared Detection on Narrow-Gap Semiconductor p-n Junctions

“…On the other hand, a wide-gap semiconductor p-n junction illuminated with IR laser light having photon energy lower than the bandgap produces a photovoltage resulting from the free carrier absorption [8][9][10][11]. In this case free carriers obtain additional energy and by overcoming the potential barrier of the junction form the so--called hot carrier photovoltage.…”

Planar asymmetric dual diode for millimetre wave detection and power measurement

“…In the case of LS, a slow fall of the voltage magnitude under the action of the MW pulse as well as a slow relaxation after the pulse is gone can be attributed to crystal lattice heating (and later cooling) and surface charge relaxation phenomena in the Schottky junction. We relate the fast peaks at the start and end of the detected voltage pulse with the hot carrier photocapacitive effect in the Schottky junction of the LS diodes [18]. The voltage responsivity of the dual MW diodes LS is approximately three times higher than that of LO.…”

High Power Microwave Detection in Asymmetrically Shaped n-AlxGa1-xAs Structures

“…The hot carrier bigradient effect is mainly responsible for induced voltage across the diode (see Ref. [3] and literature cited herein). The polarity of the detected voltage is in agreement with the bigradient electromotive force (emf).…”