Planar asymmetric dual diode for millimetre wave detection and power measurement

Abstract

The design of a simple cost-effective planar semiconductor microwave diode is proposed. The operation is based on hot carrier phenomena and rectification of microwave currents flowing through the structure composed of two diodes connected in series and having different active region areas. A simplified technological process and the use of simplex semiconductor material result in the reduction of both the time and the cost of fabrication of a dual microwave diode. By choosing an appropriate GaAs substrate, two types of microwave diodes were produced simultaneously: one almost demonstrating the ohmic behaviour and the other two having the asymmetrical Schottky-like I-V characteristic. The Schottky-like planar diodes exhibited a higher responsivity to millimetre range microwave radiation and a faster response to pulsed (down to a nanosecond scale) excitation, but the ohmic ones demonstrated better noise properties.

Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound

“…At this stage, it is worth noting, the fabrication procedure of the planar MW diodes situated on the semi-insulating substrate was completed, and such samples were handy for the measurements on a probe station. In contrast, the dual MW diodes that were based on low-resistivity GaAs substrate [ 27 ] additionally needed to be transferred onto a dielectric polyimide film in order to avoid electrical shunting through the low-resistivity GaAs substrate. Micrographic view of the finished planar MW diode on semi-insulating substrate is presented in Figure 2 .…”

“…As for commercial application, the microwave sensors must be not only sensitive and fast, but also reliable and inexpensive. We have proposed a simple design of an inexpensive planar dual microwave diode, fabricated on the base of low-resistivity gallium arsenide (GaAs) substrate [ 27 ]. The diodes were suitable both to sense microwave continuous wave signals and to measure pulsed microwave power in the nanosecond time scale [ 28 ].…”

Investigation of detection properties of planar microwave diodes based on A3B5 semiconductor compounds in millimeter–wavelength range

“…Next, the discussion covers possible application technologies for MW diodes in the MMW range and methods for investigating their electrical and HF properties using probing systems. The research results presented in this chapter were published in the author's publications Sužiedėlis et al, 2017aSužiedėlis et al, , 2017bAšmontas et al, 2020;Anbinderis et al, 2021.…”

“…The research results presented in this chapter were published in the author's publications Sužiedėlis et al, 2017aSužiedėlis et al, , 2017bAnbinderis et al, 2021.…”

“…In addition, methods are presented for evaluating the influence of temperature and illumination on the electrical parameters and detection properties of the investigated MW diodes. The research results presented in this chapter were published in the author's publicationsSužiedėlis et al, 2017aSužiedėlis et al, , 2017bAšmontas et al, 2020;Anbinderis et al, 2021 and in patent Sužiedėlis et al, 2019. …”