High Power Microwave Detection in Asymmetrically Shaped n-Al_xGa_1-xAs Structures

Abstract

Investigations of detection of high power microwaves in planar asymmetrically shaped microwave diodes on the basis of AlxGa1−xAs ternary semiconductors with various AlAs mole fraction are presented. The principle of operation of the microwave diodes is based on carrier heating phenomena in asymmetrically shaped homogeneous semiconductor structure due to different distribution of the electric field strength along the sample. Experimental results of microwave detection on the barrier-less asymmetrically shaped diodes are presented paying special attention to the homogeneity of Al x Ga 1−x As which was monitored by photoluminescence technique.