<inline-formula> <tex-math notation="TeX">\(640\times 512\) </tex-math></inline-formula> Extended Short Wavelength Infrared In_0.83Ga_0.17As Focal Plane Array

Abstract

We present the detailed characteristics of solid source molecular beam epitaxy (MBE) grown large format (640 × 512) extended short wavelength infrared In 0.83 Ga 0.17 As sensor with desirable performance at both pixel and focal plane array (FPA) levels. The FPA pixels in the mesa structure grown on a graded AlInAs buffer layer with 2.65-µm, 300-K cutoff wavelength exhibited 300-and 200-K peak detectivities as high as ∼2.5×10 10 and ∼1×10 12 cmHz 1/2 /W, which are both equivalent to the theoretical limits set by the Johnson noise of the detector. Dark current analysis of the pixels displayed no considerable tunneling component with the dark current being dominated by generation-recombination and shunt leakage mechanisms >200 K up to a reverse bias voltage of 3 V. Moreover, the noise measurements displayed no 1/ f noise in the FPA pixels. In spite of the large lattice mismatch, the FPA yielded very good response linearity, as well as impressively good responsivity nonuniformity and pixel operability of 5.5% and 99.8%, respectively. The results showing the feasibility of both solid source MBE and graded AlInAs buffer for the growth of extended InGaAs photodetectors are very encouraging for the large format FPA implementation of these detectors with desirable imaging performance and an extended cutoff wavelength as high as ∼2.7 µm.Index Terms-InGaAs, photodetector, short wavelength infrared.

Improved performance of high indium InGaAs photodetectors with InAlAs barrier

“…The cutoff wave- length of these PDs is around 2.6 µm at RT. The peak detectivity of sample B is higher than those reported by Arslan et al 21,22) and Li et al, 23) while it is slightly lower than that of the Judson device, in which antireflection coating was used. 24) To further characterize the light response performance characteristics of the two PDs, the photocurrents versus illuminating powers were measured at −10 mV and RT using a 2 µm laser source for illuminating the surfaces of the PDs through a single-mode optical fiber, as shown in Fig.…”

Short-wave infrared InGaAs photodetectors and focal plane arrays

“…[78,79] Because of the explicit demands, studies of wavelengthextended InGaAs FPAs were recently accelerated. For example, Arslan et al reported SSMBE grown 640×512 FPA of 20 µm pitch in 2014, [80] with a cut-off wavelength about 2.65 µm at RT. Mushini et al reported the MOVPE grown 320×256 FPA of 12.5 µm pitch in 2016.…”

Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure

“…The extended wavelength InGaAs detector can cover 1.0-2.5 lm detection waveband with 0.83 indium content, and it has several advantages such as high responsivity, wonderful uniformity and low energy consumption, so it can be widely used in space remote sensing, passive night vision and so on [1][2][3][4][5][6][7][8]. It is a well-known fact that the research of Ohmic contacts is a fundamental topic for semiconductors, and Ohmic contact is very important for semiconductor detector [9][10][11][12][13], because it affects the quantum efficiency and response time, and generally, the Ohmic contact resistance is the-smaller-the-better.…”